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Temperature control during chemical vapor deposition of polycrystalline silicon with substrate heating by microwaves (1993)

Buchta, R. ; Zhang, S.-L. ; Sigurd, D. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 3153-3155

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Contactless and accurate measurement of the temperature is an important issue in rapid thermal processing. In this letter we report on the variation of the emissivity of the surface during chemical vapor deposition of polycrystalline silicon onto oxidized silicon wafers. The observed periodic change in the emissivity of the polycrystalline silicon/silicon dioxide/silicon structure is due to interference phenomena in the growing layer. In these experiments the silicon wafers were heated by direct absorption of microwaves in a single wafer reactor. It is shown that with this method of heating, the change of emissivity does not influence the actual temperature of the substrate.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.109112

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