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  • 1990-1994  (3)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 3 (1991), S. 3528-3531 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple analytical modeling is made of the main breakdown properties of high-power microwave pulses propagating in air. Particular emphasis is given to breakdown levels, breakdown times, pulse erosion, and optimal pulse energy transfer. Comparison with recent experimental results shows good agreement.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5252-5254 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic properties of Cu (13.5 at. % Mn) spin-glass films of various thicknesses have been investigated in a superconducting quantum-interference device (SQUID) magnetometer. The films are produced in a dc-sputtering system and fabricated in the form of multilayer samples. Utilizing zero-field-cooled magnetization and ac-susceptibility measurements, the time-dependent susceptibility has been probed over eight decades in time (10−4–104 s). Drastic changes of the dynamics are found upon varying the film thickness from 104 to 20 A(ring). The most significant feature is a crossover from a behavior typical for bulk spin glasses for the 104-A(ring) film, with a finite critical temperature and a critical slowing down that can be accurately described by a conventional power-law divergence, to a slowing down for the very thin films that obeys a generalized Arrhenius law with a zero-temperature critical point. Thus, these measurements indicate a crossover from three- to two-dimensional spin-glass dynamics when one spatial dimension is gradually diminished to a finite size.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2523-2525 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The junction capacitance in resonant interband tunneling diodes is determined using microwave impedance measurements from 40 MHz to 62 GHz and network parameter extraction. The shape of the capacitance in the positive differential resistance region is totally different from the resonant tunneling diode. The difference can be explained by the intrinsic transport process of carriers in a resonant interband tunneling diode, what is manifested in the conductance characteristic of the device.
    Type of Medium: Electronic Resource
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