Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 4780-4782
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report a post-metallization annealing study of very thin oxide (2.4–3.2 nm), aluminum gate metal-tunnel oxide-(p) silicon devices. Voltage dependence measurements of both tunnel current and high-frequency capacitance as functions of anneal time and temperature reveal that annealing the thin oxide devices after metallization leads to a decrease in interface state density, with dynamics which are similar to, though slower than, what has been observed in thicker oxide aluminum gate systems.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.355311
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