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  • 1990-1994  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Silver Grain Boundary Segregation in Copper (1993)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 126-128 (Jan. 1993), p. 205-208 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/59/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.126-128.205.pdf
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Surface and in-depth chemical characterization of sputter-deposited Cr—Si—O layers by XPS and AES techniques (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 19 (1992), S. 453-456 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: RF-sputtered Cr—Si—O cermet films deposited without and with a bias (200 V) have been studied by XPS and AES. Samples as deposited, etched by HF solution as well as annealed at temperatures up to 600°C have been considered. XPS results showed that the surface of the as-received samples were depleted in Cr and enriched in O with respect to the target composition. Silicon and Cr were present in both oxidized and reduced forms in the surface layer. Ar+ ion sputter profiles revealed that the composition of the subsurface approached that of the target and that Cr was present in the subsurface in reduced and Si in both oxidized and reduced states. AES in-depth profiling resulted in element concentration trends similar to but element ratios different from those observed by XPS. This was attributed to preferential sputtering coupled with the significantly different sampling depths of the two techniques. Cr3Si was identified by x-ray diffraction in samples treated at 600°C, but not even traces of it could be detected by this method below 400°C. The Si Auger parameter determined by XPS proved to be more sensitive in identifying silicide-type bonds in the Cr—Si—O layers studied.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740190185
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Estimation of the grain boundary coverage of segregated impurities from the kinetics of free surface segregation (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 19 (1992), S. 615-617 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The bulk diffusion coefficient can be determined by measuring the kinetics of free surface segregation. In this paper it will be shown that if one chooses an appropriate temperature and time, the kinetics of free surface segregation mainly depend on the grain boundary diffusivity and the coverage of segregated impurity. In certain cases the grain boundary diffusion coefficient can be considered as known or at least constant and the relative grain boundary coverage can be determined. The average phosphorus coverage on the grain boundary of an Fe—P—C alloy will be studied in this way.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.7401901114
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Improved depth resolution of AES in-depth profiling (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 19 (1992), S. 77-79 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: In the case of conventional Auger in-depth profiling, the depth resolution increases with the thickness of the removed layer. It was demonstrated that by rotating the specimen, the depth resolution improves drastically in certain cases. Independently from this, A. Barna developed a phenomenological model to describe the change of surface topography developing due to ion sputtering. Based on his results, an Auger in-depth profiling device has been built. The capability of the device was checked by measuring in-depth profiles of Ni—Cr multilayer structure. The depth resolution determined from the measured profile is roughly constant along the depth.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740190117
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    Paper (German National Licenses)
    Fulltext
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