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  • 1990-1994  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Origin of the low doping efficiency of nitrogen acceptors in ZnSe grown by metalorganic chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3353-3354 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The origin of nitrogen acceptor compensation in ZnSe:N has been studied by secondary ion mass spectrometry (SIMS) and infrared absorption (FTIR) measurements. Nitrogen-doped ZnSe layers were grown by atmospheric pressure metalorganic chemical vapor deposition. Ammonia gas was used as a nitrogen source. SIMS analysis has revealed that hydrogen was incorporated only into the ZnSe:N layer with the same concentration as nitrogen. FTIR measurements at 11 K strongly suggest the presence of N—H bonding at 3193 cm−1. It is concluded that hydrogen passivation is responsible for the acceptor compensation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110142
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Adsorbed oxygen species formed by reaction with N2O on CaO (1992)
    Springer
    Reaction kinetics and catalysis letters 46 (1992), S. 421-425 
    Details
    ISSN: 1588-2837
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Abstract Значительное количество адсорбированного кислорода наблю-далось при взаимодеиствии с N2O на CaO. Полагалось, что эии адсорбированные частицы практически удерживайтся на 5-ко-ординированных центрах.
    Notes: Abstract A considerable amount of adsorbed oxygen species is formed by the reaction of N2O on CaO. It is suggested that these adsorbed species were practically held on 5-coordinated sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02070966
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    Paper (German National Licenses)
    Fulltext
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