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  • 1
    Electronic Resource
    Electronic Resource
    Two-level fluctuations of in-plane current in a narrow lateral n-i-n junction (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2813-2816 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In-plane current through lateral n-i-n junction in GaAs-AlGaAs heterostructure is measured at low temperature. The junction consists of submicron wide narrow wires and an ion damaged insulating region where percolation is a dominant current-carrying mechanism. The current appears at a sufficiently high bias voltage, due to low temperature avalanche breakdown via impurity impact ionization. Time-dependent random-telegraph signals of 100% modulation in magnitude of the current through the i region are observed, which are caused by slow trappings and emissions of electrons at trap sites. The complete switching signals show a transition from normally off to normally on with increasing applied voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346460
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  • 2
    Electronic Resource
    Electronic Resource
    Quantized resistance in in-plane gated narrow constriction fabricated by wet etching (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2916-2918 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A narrow in-plane gated constriction is defined by technique employing electron beam lithography and wet chemical etching. Two-dimensional electron gas beside the narrow channel is used to control the number of occupied subbands in the constriction. A ballistic transport through the point contact is manifested by the observation of successive resistance steps when the subbands are depopulated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103729
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  • 3
    Electronic Resource
    Electronic Resource
    Investigation of ballistic elastic scattering length and specularity in multiterminal GaAs/AlGaAs by magnetic electron focusing effect (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1609-1611 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic electron focusing effect has been investigated by paying attention to its electron density (ns) dependence in a GaAs/AlGaAs device with multiparallel terminal. With increasing ns, a ballistic elastic scattering length increases, but a specularity at boundary decreases. In a configuration in which the electrons could enter into the extra probe between injector and collector probes, still the focusing effect is clearly observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108601
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Deep levels induced by high-energy boron ion implantation into p-silicon (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1682-1684 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defects induced by B+ implantation at 0.7 MeV into n+p diodes were investigated using leakage current and deep level transient spectroscopy (DLTS). Leakage current increases drastically by implantation to a dose of more than 3×1013 cm−2. DLTS spectra reveal two hole trap levels in the shallower region than the projected range of B+. One level at 265 K (Ev+0.65 eV) is associated with point defects around dislocation kinks formed by B+ implantation to doses of more than 3×1013 cm−2. Another level at 290 K (Ev+0.67 eV) is mainly responsible for the excess leakage current. This level was, for the first time, found in p-Si after high-energy ion implantation followed by annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108450
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  • 5
    Electronic Resource
    Electronic Resource
    Numerical studies of quantum conduction through a junction of wide-narrow geometry (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 234-236 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conductance of the wide-narrow geometry in the ballistic transport regime has been calculated by numerical scattering matrix methods. The oscillations of the conductance as a function of the width of the wide region relative to that of the narrow region was found. The period of oscillation corresponds to twice the width, where a new subband is generated as the width of the wide region is increased. The amplitude of the oscillation decreases with an increase in the width of the wide region. The effects of contact potential at a junction are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106974
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  • 6
    Electronic Resource
    Electronic Resource
    Width dependence of magnetoresistance in GaAs-AlGaAs wires fabricated by mesa etching (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 340-343 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs-AlGaAs quantum wires with various widths have been fabricated using electron beam lithography and Ar ion etching. Conductance was measured as a function of the etched depth and the wire width. The results indicate that defects diffuse at room temperature. Shubnikov–de Haas oscillations in GaAs-AlGaAs film and wires with different widths have been measured to investigate the effect of the surface damage on the electron transport characteristics. The analysis of the results shows that both electron density and scattering time decrease with decreasing the width of the channel. These are indicative of the side wall scattering and the damages induced during the sample preparation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345259
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of radio-frequency bias on GaAs surfaces etched by Ar-electron-cyclotron-resonance plasma (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2591-2595 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Ar-electron-cyclotron-resonance (ECR) microwave (MW) plasma has been applied on GaAs surfaces for investigating the effects of radio-frequency bias on etching reaction and radiation damage. The etch depths as a function of the etching time gave a linear profile with etch rates of 75 and 100 A(ring)/min for 150- and 300-W MW powers under a 4-W rf bias, respectively, but for the etch rates an exponential profile is obtained as a function of the square root of the rf bias power. The electrical characteristics of Schottky barriers fabricated on the etched surface show strong rf bias dependence. Increasing the rf bias power, the donor concentration near surface and the barrier height decrease but the ideality factor and the depletion layer width increase monotonically. The changes are attributed to the radiation damage induced by the Ar ECR plasma which becomes gradually deeper in the damage layer and higher in concentration with increasing rf bias power. The rf biasing in the ECR plasma (which has the exceptional characteristic of being applicable to semi-insulating specimens) is very similar in effect to dc biasing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345489
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  • 8
    Electronic Resource
    Electronic Resource
    Laser-induced dry chemical etching of Mn-Zn ferrite in CCl2F2 atmosphere (1991)
    Springer
    Applied physics 53 (1991), S. 39-45 
    Details
    ISSN: 1432-0649
    Keywords: 75.50G ; 81.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Maskless etching of Mn-Zn ferrite in dichlorodifluoromethane (CCl2F2) by Ar+-ion laser (514.5 nm line) irradiation has been investigated to obtain high etching rates and aspect-ratio of etched grooves. The etching reaction was found to be thermochemical. High etching rates of up to 360 μm/s, which is about one order of magnitude higher than that in a CCl4 gas atmosphere and even higher than that in a H3PO4 solution, have been achieved. A maximum aspect-ratio of 6.9 was obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00325481
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  • 9
    Electronic Resource
    Electronic Resource
    Laser-induced deposition of Ni lines on ferrite in NiSO4 aqueous solution (1991)
    Springer
    Applied physics 52 (1991), S. 129-134 
    Details
    ISSN: 1432-0630
    Keywords: 81.15 ; 82.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Maskless deposition of nickel lines on single crystalline Mn-Zn ferrite (MnO:ZnO:Fe2O3=31:17:52) has been investigated in a NiSO4 aqueous solution by Ar+ laser irradiation. A high deposition rate of up to 36.4μm/s was achieved by a single scan of laser beam. The purity of deposited nickel layers is up to 86%. In particular, well-defined values of laser power and laser irradiation time were necessary for effective deposition. The deposition process was found to be a thermochemical process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323729
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  • 10
    Electronic Resource
    Electronic Resource
    Laser-induced local modification of the magnetic properties of 301 stainless steel (1990)
    Springer
    Applied physics 51 (1990), S. 151-154 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 81.60 ; 75.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The martensitic phase of 301 stainless steel has been locally transformed into the austenitic phase by irradiating it with a focused Ar-ion laser beam in order to investigate the local change of magnetic properties accompanying the phase transformation. The intensity of the magnetic signal was found to locally reduce at a laser power of 350 mW and almost extinguish at 550 mW with a beam spot size of 13.2 μm (at 1/e intensity), indicating the local austenitic phase transformation of the irradiated stainless steel.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324280
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