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Interstitial carbon-oxygen complex in near threshold electron irradiated silicon (1992)

Shinoda, K. ; Ohta, E.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 61 (1992), S. 2691-2693

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A new electron trap at Ec-0.06 eV is detected in n-type silicon irradiated with 200 keV electrons at room temperature using deep-level transient spectroscopy. The annealing behavior of this defect level shows that the level arises from an interstitial carbon-interstitial oxygen complex that is a configurational precursor of the EPR G15 center. We propose a simple model of defect formation that is consistent with the dependence of the defect level concentration on the electron fluence.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.108111

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