ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated the gas pressure dependence of electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (PECVD) and prepared n-type μc-SiC:H with wide optical band gap (2.1–2.5 eV) and high dark conductivity (10−3– 1 S/cm). It has been suggested from plasma diagnoses of the ECR plasma that at low gas pressure a strong etching effect of hydrogen radicals and/or ions dominates the film growth process and the hydrogen ions impinging on the growing surface make the formation of μc-SiC:H difficult, and that at high gas pressure, for the formation of μc-SiC:H, there are nonemissive radicals contributing to the surface coverage or a nucleus formation mechanism which has not been taken into consideration in conventional rf-PECVD.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104731
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