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  • 1
    Electronic Resource
    Electronic Resource
    Nitridation of a Si(100) surface by 100–1000 eV N+2 ion beams (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 8238-8245 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The nitridation mechanism of silicon at room temperature under exposure to 100–1000 eV N+2 ion beams has been studied in situ in an ultrahigh vacuum apparatus using x-ray photoelectron spectroscopy. The increase of the nitrogen content in a surface layer as a function of the ion dose was described by a simple formula which was derived by assuming random occupation of the reaction sites in the penetration zone of the nitrogen atoms. A change of the binding energy and the width of the N1s x-ray photoelectron spectrum during the reaction was observed and discussed with the component ratio N/Sireacted. The Si2p x-ray photoelectron spectra were deconvoluted into five components of Si(0), Si(1), Si(2), Si(3), and Si(4) by curve fitting, where Si(n) represents the component of Si bonded to n nitrogen atoms. Their populations were dependent on the ion dose and the ion energy. The nitride layers formed in the Si surface with low energy beams of 100–200 eV had near-stoichiometric composition of Si3N4. With beams of energy higher than 300 eV, however, they were nonstoichiometric compounds SiNy (y〈1.3) which were mixtures of those components. The influence of the beam energy was observed by the chemical shifts of the N1s and Si2p peaks at the saturation of the N content.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.468194
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical characterization of ZnSe epitaxial layer reactive-ion-etched by a gas mixture of ethane and hydrogen (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8231-8233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sheet resistances of ZnSe epitaxial layers etched by reactive ion etching (RIE) with use of a gas mixture of ethane and hydrogen were measured. The results showed that a high resistivity region was introduced by RIE. Characterization was done by transforming the measured resistances to the electrically active thickness estimated from the resistivity of as-grown ZnSe layers. The estimated electrically active thicknesses were smaller than the thickness of ZnSe epitaxial layers remaining after RIE, for both p- and n-ZnSe. The influence of heat treatment and current injection on the high resistivity regions differed between p- and n-ZnSe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356530
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  • 3
    Electronic Resource
    Electronic Resource
    An investigation of product distributions in microwave plasma for diamond growth (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4532-4539 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stable compounds in microwave plasmas of various source gases for vapor-phase diamond growth have been measured by using in situ Fourier transform infrared spectroscopy. Each gas mixture of CH4+H2, C2H2+H2, C2H4+H2, CH3OH+H2, C2H5OH+H2, CO+H2, CCl4+H2, and CH4+O2+H2 was introduced into the plasma discharge region as a source gas. The detected carbonaceous compounds were CH4, C2H2, C2H4, and CO, and no other carbonaceous compounds were observed. CH4 and C2H2 were observed in plasmas of all source gases, whereas C2H4 was detected only at higher concentrations of carbonaceous compounds in source gases. CO was produced from source molecules containing oxygen atoms. The source molecules of CH3OH, C2H5OH, and CCl4 disappeared in the microwave plasma. Concentrations of products in the plasmas of CH4+H2, C2H2+H2, and C2H4+H2 were very similar. This result suggests that an equilibrium among CH4, C2H2, C2H4, H2, H, electrons, and various radicals is kept in the hydrogen excess plasma. Moreover, it was found that the addition of O2 to the CH4+H2 plasma reduced the concentrations of CH4 and C2H2 in the plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349088
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence characterization of InP surface reactive ion etched by a gas mixture of ethane and hydrogen (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2361-2365 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP crystals were etched by reactive ion etching (RIE) with gas mixture of ethane and hydrogen (C2H6/H2), and etching damages were characterized by photoluminescence (PL) measurements of near-edge and defect-related emissions. Near-edge PL emission intensities after RIE were equal to or larger than those before RIE, except for the samples etched for 50 min. The damage introduced by RIE was restricted to the very-near-surface region which can be removed by HF treatment. The peak energy of defect-related 1.1-eV deep emission bands shifted toward the lower-energy side for the crystals with etching damages at the surface. The peak shift is attributable to the increase of defect complexes such as P-vacancy–P-interstitial or P-vacancy–In-vacancy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349436
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  • 5
    Electronic Resource
    Electronic Resource
    Reactive ion etching of ZnSe by gas mixture of ethane and hydrogen (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3025-3026 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe epitaxial layers grown by gas source molecular beam epitaxy were etched by reactive ion etching (RIE) with a gas mixture of ethane and hydrogen (C2H6/H2). Smooth etching surfaces were obtained under the following RIE conditions: an ethane concentration (flow fraction) of 3%, total flow (C2H6+H2) of 55 sccm, total pressure of 15 Pa and radio frequency power density of 0.6 W/cm2. This ethane concentration is smaller than that in III–V semiconductors, 5%–7%. The etching rate of ZnSe was 21 nm/min and smaller than that of III–V semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106797
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  • 6
    Electronic Resource
    Electronic Resource
    Direction-selective saccadic-burst neurons in the fastigial oculomotor region of the macaque (1990)
    Springer
    Experimental brain research 81 (1990), S. 659-662 
    Details
    ISSN: 1432-1106
    Keywords: Fastigial neurons ; Saccadic eye movements ; Saccadic burst units ; Vermal microstimulation ; Macaque
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Discharges of 68 neurons, recorded from the oculomotor region of the fastigial nucleus (FN) of the macaque, were characterized by a burst which started approximately 20 msec prior to the onset of a saccade in a direction contralateral to the recording site. These fastigial neurons also paused before saccades in their nonpreferred direction and then discharged with a subsequent burst. All units were spontaneously active but the tonic level of activity did not reflect eye position. They aggregated within the oculomotor region and the firing of 57 units (83.8%) was suppressed by stimulation of vermal lobule VII. Tonic discharges of six other units were closely related to eye position and located rostral to the burst units. Discharges of 16 units increased during the ipsilateral phase of sinusoidal head rotation and those of 50 units increased during contralateral head rotation. These neurons did not show saccade-related activity. They were widely scattered in the rostral and central portions of the FN. None of these units was inhibited by stimulation of vermal lobule VII.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02423517
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  • 7
    Electronic Resource
    Electronic Resource
    Curing behavior of epoxy resin having hydroxymethyl group and different molecular weight distribution (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Journal of Applied Polymer Science 44 (1992), S. 1543-1546 
    Details
    ISSN: 0021-8995
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: o-Cresol novolac-type epoxy resins having hydroxymethyl group were synthesized. These epoxy resins were cured with a mixture of 4,4′-diaminodiphenylmethane and m-phenylenediamine (molar ratio, 6:4) as a hardener. Effects of molecular weight distribution of epoxy resins on curing behavior were studied. Curing behavior of epoxy resins with hardener were examined by differential scanning calorimetery (DSC), and cure reaction parameters were obtained. Viscoelastic properties of the cured epoxy resins were studied by dynamic mechanical analyzer. It was found that the lower the average molecular weight of the epoxy resin, that is, the higher the concentration of hydroxymethyl group, the shorter the onset time of exothermal reaction, the higher the rate constant (k), and the lower the activation energy (Ea) were. It was also found that glass transition temperature (Tg) of fully cured epoxy resins was higher than those of fully cured general novolac-type epoxy resins.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/app.1992.070440906
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