Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 2582-2584
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Lateral carrier diffusion in a strained Si1−xGex/Si quantum well (QW) is reported using a periodic two-dimensional grating geometry defined by focused ion beam local-Ga-implantation. With systematically changing the grating period, we observed a clear dominance switch of steady-state photoluminescence (PL) intensity between defect-related luminescence from Ga-implanted grating stripes and PL emanating from the centered QW region. Fitting to a simple diffusion model, the lateral diffusion length was found to extend to several microns at low temperatures, whereas it increases with temperature up to 58 K. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112645
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