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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Environmental science & technology 27 (1993), S. 596-600 
    ISSN: 1520-5851
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2087-2090 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results of enhanced interdiffusion of GaAs-AlGaAs interfaces are reported. These are obtained by implanting Ar ions at doses ranging from 2×1013 to 5×1014 cm−2 into heterostructure samples followed by rapid thermal annealing at 950 °C for 30 s. The degree of intermixing decreases from the surface up to the projected ion range and is a function of the implantation dose. It is postulated that this variation results from the coalescence of some of the excess vacancies into extended defects, which are then unavailable to assist in the enhanced interdiffusion process. By assuming that the concentration of mobile vacancies at any depth is proportional to the ion's electronic energy loss and inversely proportional to the ion's nuclear energy loss, the calculated intermixing results are shown to be in good agreement with the experimental data.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality epitaxial Pt films were deposited by pulsed laser deposition on (100)Si using TiN as a buffer layer. The films were (100) oriented normal to the substrate surface with a high degree of in-plane orientation with respect to the major axes of the substrate and buffer layer. An ion beam minimum channeling yield of 39% was obtained for the Pt films, indicating high crystallinity. High-resolution transmission electron microscopy results showed that interfaces between substrate/film and film/film were quite smooth and no perceptible interdiffusion was observed. The epitaxial TiN layer effectively acts as a barrier to impede metal-substrate reaction and helps in good adhesion of the Pt films on (100)Si. This structure is suitable for epitaxial growth of oxide films on Si with an underlying conductive electrode. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature superconductor YBa2Cu3O7−δ based superconducting-normal-superconducting (SNS) Josephson junctions were fabricated using a unique device design. The normal material included a gradient Pr-doped Y1−xPrxBa2Cu3O7−δ layer which was composed of a light doping (x=0.1) next to both YBa2Cu3O7−δ electrodes, a slightly higher doping (x=0.3) towards the center, and a doping concentration of x=0.5 in the middle of the N layer. This design graded the lattice mismatch between YBa2Cu3O7−δ and the N layer, thus avoiding the accumulation of all the lattice strain at one interface. It also results in good chemical, thermal, and structural compatibility between adjacent layers for the desired multilayer structures. The SNS junctions fabricated in this way showed resistively shunted junction current-voltage characteristics under dc bias and Shapiro steps under microwave irradiation at a temperature in the range of 75–87 K. Direct current superconducting quantum interference devices showed a voltage modulation about 5 μV by a magnetic field at liquid nitrogen temperature. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1317-1319 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel ridge waveguide semiconductor laser diode is introduced, which contains a single depressed-index cladding layer. Deployment of this layer significantly reduces the transverse beam divergence, while maintaining reasonable values for the optical confinement factor, Γ, and the lateral index step. For lasers with 500 A(ring) active layers and ridge widths of 4 μm, we measured transverse and lateral far-field beam divergences of 16.4° and 8.2°, respectively, and threshold currents of 67 mA for 500-μm-long devices.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1961-1963 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High current YBa2Cu3O7−δ (YBCO) thick films on flexible nickel substrates with textured buffer layers were fabricated. Highly textured yttria-stabilized-zirconia buffer layers were deposited by using ion beam assisted deposition (IBAD). Pulsed laser deposited YBCO films were not only c-axis oriented with respect to the film surface but also strongly in-plane textured. The in-plane mosaic spread of YBCO films was ∼10°. A critical current density of 8×105 A/cm2 was obtained at 75 K and zero field for thin YBCO films. It was also demonstrated that thick YBCO films with a high critical current and excellent magnetic field dependence at liquid nitrogen temperature can be obtained on flexible nickel substrates by using the textured buffer layers. The result indicates that thick film technology in combination with IBAD buffer layers could be a viable method for fabricating YBCO tapes in long lengths. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Bulk YBa2Cu3O6+x superconductor was synthesized using the hot-pressing technique combined with various oxygen-annealing cycles. Pressed samples, with theirab-planes perpendicular to the pressing axis, annealed in oxygen at the partial melting point of approximately 1000°C and slowly cooled at different rates in the temperature ranges 975–935 and 935–450°C showed enhanced magnetization hysteresis loops with a weak field dependence. Due to oxygen-deficient regions in these materials, anomalous magnetization hysteresis loops with a “butterfly” contour were observed at temperatures above 50 K. This indicates that these regions act as effective flux-pinning centres at high temperatures. The critical magnetization current density (J c) calculated using the Bean model and the average grain dimension was of the order of 104 A cm−2 at 75 K up to 1 T. Because of a shorter period of oxygenation and a weak field dependence ofJ c s, the synthesis process reported here is very promising and further optimization of the period in various annealing temperature ranges to limit the weak links caused by excessive grain growth becomes necessary. The observations are also correlated with the morphology and the crystal orientation studied by scanning electron microscopy and X-ray diffractometry, respectively.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] To develop an assay for the FLT3/FLK2 ligand (FL) and to identify producer cells, we transfected the pro-B cell line Ba/F3 (ref. 6) with a cDNA clone encoding mouse FLT3/FLK2. Stable transformants, called Baflt, were then used as target cells in a proliferation assay with conditioned medium from ...
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1432-0819
    Keywords: Key words: lava tubes ; lava flows ; shield volcanoes ; littoral lava tubes ; basalt ; Mauna Ulu ; Kilauea
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Notes: Abstract During the 1969–1974 Mauna Ulu eruption on Kilauea's upper east rift zone, lava tubes were observed to develop by four principal processes: (1) flat, rooted crusts grew across streams within confined channels; (2) overflows and spatter accreted to levees to build arched roofs across streams; (3) plates of solidified crust floating downstream coalesced to form a roof; and (4) pahoehoe lobes progressively extended, fed by networks of distributaries beneath a solidified crust. Still another tube-forming process operated when pahoehoe entered the ocean; large waves would abruptly chill a crust across the entire surface of a molten stream crossing through the surf zone. These littoral lava tubes formed abruptly, in contrast to subaerial tubes, which formed gradually. All tube-forming processes were favored by low to moderate volume-rates of flow for sustained periods of time. Tubes thereby became ubiquitous within the pahoehoe flows and distributed a very large proportion of the lava that was produced during this prolonged eruption. Tubes transport lava efficiently. Once formed, the roofs of tubes insulate the active streams within, allowing the lava to retain its fluidity for a longer time than if exposed directly to ambient air temperature. Thus the flows can travel greater distances and spread over wider areas. Even though supply rates during most of 1970–1974 were moderate, ranging from 1 to 5 m3/s, large tube systems conducted lava as far as the coast, 12–13 km distant, where they fed extensive pahoehoe fields on the coastal flats. Some flows entered the sea to build lava deltas and add new land to the island. The largest and most efficient tubes developed during periods of sustained extrusion, when new lava was being supplied at nearly constant rates. Tubes can play a major role in building volcanic edifices with gentle slopes because they can deliver a substantial fraction of lava erupted at low to moderate rates to sites far down the flank of a volcano. We conclude, therefore, that the tendency of active pahoehoe flows to form lava tubes is a significant factor in producing the common shield morphology of basaltic volcanoes.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1572-9591
    Keywords: Cold fusion ; Pd-D2O cells ; Ti-D2 systems ; barrier penetration calculations
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract We have searched for cold fusion produced in an electrolytic cell with Pd cathode and Pt anode. The electrolyte was 0.1 molar LiOD in 99.8% D2O. A 2-mm rod of polycrystalline Pd and a 4-mm rod of single crystal Pd were used. No radiation was detected above background by a BF3 neutron and Ge γ-X detector. The D2 loading of the Pd was 0.8 D per Pd atom reaching saturation after 4 hours. We also attempted to duplicate the work of Scaramuzzi and co-workers on the Ti-D2 system. Both powder and pieces of Ti were used. The material was cycled several times between 1100 K and 77 K. No neutron, γ- or x-ray emission above background was observed. The results of a barrier penetration calculation for H-like atoms are presented. The high fusion rates reported for PdD x . are much larger than those expected from theoretical calculations on these systems.
    Type of Medium: Electronic Resource
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