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Auger generation suppression in narrow-gap semiconductors using the magnetoconcentration effect (1992)

Djuric, Zoran ; Jakšic, Zoran ; Vujanic, Aleksandar ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 71 (1992), S. 5706-5708

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A method is presented for the Auger generation suppression in narrow-gap semiconductors using the magnetoconcentration effect for the case when all the generation-recombination mechanisms (Auger, radiative, and Shockley–Read) are taken into account. A numerical solution is given for the kinetic equation determining carrier concentration distribution in a thin semiconductor slab placed in an electric and a magnetic field. The results of the numerical calculation show that the Auger generation suppression becomes very efficient when the concentration of Shockley–Read recombination centers is small enough.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.350505

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The performance of Hg1−x Zn x Te photodiodes (1990)

Rogalski, A. ; Rutkowski, J. ; Jóźwikowski, K. ; [et al.]

Springer

Applied physics 50 (1990), S. 379-384

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ISSN: 1432-0630

Keywords: 72.40.+w ; 85.60.Gz

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract This paper considers the Hg1−x Zn x Te alloy system as a potential material for the fabrication of infrared photodiodes. The influence of different junction current components (diffusion, tunneling and depletion layer currents) on the R 0 A product of n+-pHg1−x Zn x Te photodiodes is analysed. The upper theoretical limits of the R 0 A product and detectivity are determined. Results of calculations are compared with experimental data reported by other authors and those measured in our laboratory. Preliminary results on related technology and the properties of Hg1−x Zn x Te prepared by the ion-etching technique are presented.