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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Insectes sociaux 38 (1991), S. 37-44 
    ISSN: 1420-9098
    Keywords: Monogyny ; polygyny ; queen behavior ; Camponotus
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary Behavioral differences of queens of the obligately monogynous and facultatively polygynous forms ofCamponotus nawai complex were examined. Queens of the monogynous form were groomed by and received food from workers more frequently but they walked about inside nests less frequently than queens of the polygynous form. Hierarchical relationships were not observed among queens of polygynous nests. In general, those queens were equally cared for by workers, aggregated around the center of nests, and showed no hostility toward each other.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Biochemistry 60 (1991), S. 349-400 
    ISSN: 0066-4154
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Chemistry and Pharmacology , Biology
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1540-8183
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: This article presents the first case of fatal pericardial tamponade following immediately after- successful percutaneous balloon mitral commissurotonry by the Inoue balloon. The patient had a large right atrium associated with severe tricuspid regurgitation and this led to incorrect atrial puncture (so culled stitching phenomenon) under the Inoue method fir determining the site of fossa ovalis. (J lnterven Cardiol 1994; 7:33–37)
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In addition to being initially developed as an energy driver for an inertial confinement fusion, an intense, pulsed, light-ion beam (LIB) has been found to be applied to materials science. If a LIB is used to irradiate targets, a high-density "ablation'' plasma is produced near the surface since the range of the LIB in materials is very short. Since the first demonstration of quick preparation of thin films of ZnS by an intense, pulsed, ion-beam evaporation (IBE) using the LIB-produced ablation plasma, various thin films have been successfully prepared, such as of ZnS:Mn, YBaCuO, BaTiO3, cubic BN, SiC, ZrO2, ITO, B, C, and apatite. Some of these data will be presented in this paper, with its analytic solution derived from a one-dimensional, hydrodynamic, adiabatic expansion model for the IBE. The temperature will be deduced using ion-flux signals measured by a biased ion collector. Reasonable agreement is obtained between the experiment and the simulation. High-energy LIB implantation to make chemical compounds and the associated surface modification are also discussed.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 841-841 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In order to obtain a reliable cold valve (or low temperature valve) which can be tested at room temperature, several combinations of hard material for the valve stem tip and soft material for the valve seat were tested. The combination of Be-Cu and Ag gave satisfactory performance.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 265-266 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The first OCTOPUS electron cyclstron resonance (ECR) multicharged heavy ion source was built in 1985 at the Centre de Recherches du Cyclotron of the University of Louvain (Belgium). This first source used an ECR frequency of 14.3 GHz in the injector stage and 8.5 GHz in the main confinement stage. A new OCTOPUS source has now been built for a new cyclotron to be installed at the Japan Atomic Energy Research Institute (JAERI). The design of this new OCTOPUS source is identical to the first OCTOPUS source, but uses an ECR frequency of 6.4 GHz in the main confinement stage. The experimental results are described, and a comparison is made between the two sources. However, the available data does not allow any clear conclusion to be drawn on frequency scaling.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1685-1687 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated Josephson junctions from c-axis oriented heteroepitaxial Bi2(Sr,Ca)3Cu2Ox/Bi2Sr2CuOy/Bi2(Sr,Ca)3Cu2Ox trilayer films. The junctions showed resistively shunted junctionlike characteristics up to 30 K. Several junctions showed hysteresis at low temperatures. The highest value of the product of the critical current and the normal state resistance of the junctions was about 0.2 mV. Clear Shapiro steps at the expected voltages were observed in the presence of external microwave irradiation. The height of these steps oscillated to full suppression as a function of the microwave source power. Moreover the periodic magnetic field dependence of the critical current was clearly observed. These results indicated a good uniformity in the Josephson current distribution in these junctions.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2445-2447 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on large in-plane anisotropic transport properties observed in epitaxial Bi2(Sr,Ca)3Cu2Ox films grown on tilted (001)SrTiO3 substrate. By tilting the surface normal axis about 4° toward [111]SrTiO3, regular steps and terraces were formed on the substrate surface and perfect alignment of film b axis with incommensurate modulation along [110]SrTiO3 was realized. The film c axis was perpendicular to the (001)SrTiO3 terrace, thus the film c axis grew tilted 4° toward [111] from surface normal due to the surface inclination. In those epitaxial configurations, the in-plane resistivity along the step direction(ρ[110]) involved the contribution from the c-axis(ρc) component, and we observed the large resistivity anisotropy between a- and b- direction of the film. The transport along a axis(ρa) showed a low resistivity with metallic temperature dependence while the resistivity along the step direction(ρ[110]) was higher and semiconductive. The ratio of ρc/ρa ≈ 104 estimated in this experiment agrees well with the anisotropy observed in the bulk single crystal.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1008-1010 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed the spiral growth of C60 grown on cleaved graphite using atomic force microscopy. Triangular terraces in the spirals consist of a monolayer of C60 having a 10 A(ring) step height which agrees well with (111) lattice constant of fcc-C60. One of the characteristic features of the C60 spiral is the presence of a line defect running from the spiral core and crossing the spiral terraces. As a result, the original helicoid plane transforms into a stack of terraces. We think the C60 spiral growth is terminated by the introduction of a line defect at the early stages of the film growth, resulting from the weak van der Waals forces.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1092-1094 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ epitaxial growth of Bi2(Sr0.6Ca0.4)3Cu2Ox films by ion beam sputtering on cleaved MgO substrates was studied. The crystallographic structures were analyzed by in situ reflection high-energy electron diffraction, a four-circle x-ray diffractometer, and a scanning electron microscope. While the epitaxial films on polished MgO substrates commonly showed the fourfold symmetry, epitaxial films having twofold symmetry were grown on cleaved MgO substrates and the films contained two types of equivalently misoriented domains. The epitaxial relationship between these domains and cleaved MgO substrates was such that the b axis of each domain deviated approximately ±13° from [010]MgO where the cleavage steps ran along [100]MgO. The step edges seemed to play an important role in the occurrence of the twofold epitaxial relationship, where the incommensurate modulation tended to align its direction so as to avoid the step edges.
    Type of Medium: Electronic Resource
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