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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Algorithmica 12 (1994), S. 18-29 
    ISSN: 1432-0541
    Keywords: Computational geometry ; Closest pair ; Point location ; Centroid ; Amortization
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science , Mathematics
    Notes: Abstract We give an algorithm that computes the closest pair in a set ofn points ink-dimensional space on-line, inO(n logn) time. The algorithm only uses algebraic functions and, therefore, is optimal. The algorithm maintains a hierarchical subdivision ofk-space into hyperrectangles, which is stored in a binary tree. Centroids are used to maintain a balanced decomposition of this tree.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7256-7264 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality epitaxial Co and Fe silicides have been grown by molecular beam epitaxy on Si(111) and Si(001) substrates with film thicknesses ranging between 25 and 8400 A(ring). We used Rutherford backscattering spectrometry channeling techniques to measure the lattice distortion as a function of film thickness. The critical thickness hc corresponding to the film thickness at which strain relieving dislocations begin to appear was determined for CoSi2 on Si(111) and Si(001) as well as for Si on CoSi2(111). For CoSi2 on Si(001), a larger critical thickness was obtained than on Si(111), where hc is ∼45 A(ring). Epitaxial Si on CoSi2(111) was found to be under a compressive strain up to thicknesses of about 350 A(ring) depending on substrate misorientation. Strain measurements were also performed on epitaxially stabilized Co and Fe monosilicides with the CsCl structure. Channeling measurements on thick epitaxial films of bcc-Fe, Fe3Si, FeSi, and Fe0.5Si were used to determine the crystalline quality. Excellent channeling minimum yields of 4.0% were found for bcc-Fe/Si(111). The results are compared with structural information obtained from x-ray diffraction and Brillouin scattering spectroscopy. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2220-2222 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of SimGen/Si(001) strained-layer superlattices by magnetron sputter epitaxy is reported. Films of excellent crystal quality resulted from low-temperature sputter growth at TS=350 °C, as is evidenced by Rutherford backscattering spectrometry minimum channeling yields χmin=3%. The absence of relaxation was demonstrated by Raman spectroscopy. Raman results on the first-order longitudinal-optical Ge–Ge phonon proved pure Ge to be present in a Si30Ge6 superlattice, which indicates an interface broadening of the order of 2 monolayers. High resolution transmission electron microscopy confirmed the formation of smooth and well-defined interfaces between subsequent Si and Ge layers. © 1994 American Institute of Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    European journal of clinical microbiology & infectious diseases 13 (1994), S. 50-55 
    ISSN: 1435-4373
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract In order to obtain pan-European data on methicillin-resistantStaphylococcus aureus (MRSA), 43 laboratories from ten European countries each screened 200 consecutiveStaphylococcus aureus isolates for methicillin resistance. Only one isolate per patient was permitted. All participants used a uniform oxacillin-supplemented screening plate. MRSA isolates were sent to Munich for reconfirmation and further susceptibility testing. Phage typing of the MRSA strains was performed in Denmark. Of the 7,333Staphylococcus aureus strains screened, 936 (12.8%) were methicillin resistant. The proportion of MRSA in the various European countries ranged from 〈1% in Scandinavia to 〉 30% in Spain, France and Italy. Rates of resistance to the non-glycopeptide antibiotics were lowest for rifampin and highest for ciprofloxacin. Sixty percent of the methicillin-resistant strains originated from patients in surgical and medical departments, with wounds being the most common isolation source. MRSA was found more frequently in intensive care patients. Only 13% of the strains were non-typable, and 76% of the isolates belonged to phage group III. For each area phage typing detected one or a few dominating (epidemic) types, but 46% of the strains did not belong to these types; the MRSA population is thus a mixture of epidemic and non-epidemic strains. MRSA seems to be a growing problem, especially in southern Europe, where incidence and rates of antibiotic resistance are alarmingly high.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1434-601X
    Keywords: 25.70.Lm ; Mn
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Correlations between two intermediate-mass fragments resulting from 840 MeV32S projectiles interacting with197Au were measured. The angular correlations and absolute two-fragment cross sections agree with predictions of a semi-microscopic model for direct dynamic projectile break-up. This suggests a predominantly direct mechanism for the production of intermediate-mass fragment pairs. It is argued that the intensity of such a channel which, compared to decays yieldingα particles, is much larger than observed for the sequential decay of corresponding primary excited nuclei, supports the direct-break-up interpretation. The model mechanism yields also strongly damped projectile fragments of intermediate mass.
    Type of Medium: Electronic Resource
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