Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 379-381
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the first demonstration of metal-semiconductor field-effect transistors (MESFETs) made from GaAs structures grown with an alkylarsine source, tertiarybutylarsine (t-BuAsH2). MESFET fabrication was performed in parallel on t-BuAsH2 and arsine-grown wafers to enable direct comparison of device characteristics. The GaAs n+-n MESFETs made with t-BuAsH2 exhibited excellent saturation and pinch-off characteristics, and diode performance comparable to arsine-grown devices. Although the peak transconductance gm was lower than that achieved with the arsine sample, the form of the gm versus gate voltage curves for the t-BuAsH2-grown devices were characteristic of well-behaved GaAs MESFETs. These initial results demonstrate the capability of t-BuAsH2 for growing electronic device structures having good carrier transport properties and effective isolation layers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102791
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