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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    European radiology 4 (1994), S. 584-586 
    ISSN: 1432-1084
    Keywords: Pineal body, neoplasms ; Bone neoplasms, secondary
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract A case of histologically proven skeletal metastases from pineoblastoma is presented. The primary tumor was initial1y treated by surgery and radiotherapy. To the best of our knowledge this is the third reported case of skeletal metastases arising from such primary tumor.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 613-615 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of strong luminescence from porous Si grains containing Si nanocrystallites embedded in polymethyl methacrylate disks. In concentrated samples, forward and backscattered photoluminescence spectra were just as strong as in porous Si on Si wafers. This new result indicates that porous Si grains could be embedded in nonconducting polymers and would retain all its inherent characteristics as in porous Si layers on Si wafers.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2700-2702 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication technology and the properties of a light-emitting device including a porous pn junction are presented. We employ the selective formation of different kinds of porous silicon substructures caused by the doping level and the illumination during anodization. The device has a nanoporous light-emitting n layer between a mesoporous p+-doped capping layer and the macroporous n substrate. The pn junction formed in this way has strong rectifying characteristics. It shows bright red-orange light emission under forward bias. Compared to simple metal-porous silicon devices, the structure has an increased quantum efficiency (factor 10–100).
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 83 (1991), S. 185-192 
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The interpretation of the photoemission spectra of NiO is considered with respect to the dispersion of thed-bands. The dispersion of thed-bands can not be measured due to the formation of an exitonic state. The electronic nature of the states which are responsible for the optical gap in NiO is discussed.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 88 (1992), S. 247-248 
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The electronic structure of the Li doped large gap semiconductor (insulator) NiO is investigated by photoemission and inverse photoemission spectroscopy. Spectral weight is produced by the Li doping within the gap at 1.4 eV above the top of the valence band. It is interpreted as due to an acceptor level associated with a LiO complex.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1434-6036
    Keywords: 79.60 ; 71.20 ; 71.28
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract From photoemission and electron-energy-loss data the following picture of KMnO4, with MnVII (with a formal charge state Mn7+ (3d 0)) tetrahedrally surrounded by four O2−-ions, is deduced: strong covalent bonding between MnVII and O2− leads to a considerable occupation of the Mn-3 d shell. The ground state of the (MnO4)−1 molecule is an orbital and spin singlet as seen by the absence of any multiplet splitting in the Mn core levels. The valence band shows a four peak structure extending form 4 eV to 8 eV below the Fermi energy. The first peak at 4.2 eV has mainly O-2p character. The remaining peaks are of strongly mixed Mn-3d/O-2p character due to the covalent bonding. This mixing decreases with increasing binding energy. The electron energy loss data show a variety of structures between 2 eV and 10 eV independent of the primary electron energy which defines them as dipole allowed charge-transfer transitions. An additional excitation at 1.8 eV decreases quickly in intensity with increasing electron energy which classifies it as a dipole or spin forbidden transition in the compound. This energy is close to the value of 1.6 eV reported for the activation energy observed in electrical transport data. The results are compared to quantum chemical molecular orbital calculations of the (MnO4)−1 molecule.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 89 (1992), S. 21-27 
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The exchange splittings of the 3s core levels are analyzed for a number of manganese, iron and cobalt compounds. It is found that in MnF2, MnCl2, FeF3, FeF2, FeCl2 and CoF2 the lowest energy state after photoemission has the samed-electron count as the ground state. In CoCl2 the mixing of thed 7L and thed 8L−1 is very strong.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 85 (1991), S. 43-48 
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The electronic structure of (LaSr)2CuO4 and (NdCe)2CuO4 are compared. It is concluded that in both materials after doping by holes and electrons respectively the Fermi energy is at the top of the valence band. This explains many symmetrical properties and in particular the photoemission experiments.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 86 (1992), S. 207-215 
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The nature of the optical absorption gap in NiO at 4.0 eV is investigated. It is found that this gap is due to a band to band transition, where an electron is taken out of the valence band and placed into the conduction band. The optical gap of 6.0 eV found in Ni∶MgO is of a nature, where an electron is taken out of the oxygen 2p band and placed into the first affinity level of the Ni2+ ion (3d 8L»3d 9L−1). The impurity band created in Ni1−x Li x O by the Li ions is found 2.3 eV below the bottom of the conduction band in agreement with model predictions.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The interaction of metals with polymer surfaces is studied by photoelectron spectroscopy for the case of Ag/polybutene (Ag/PB-1) and Sn/polybutene (Sn/PB-1). While Ag/PB-1 shows the normal behaviour as observed for small particles, e.g., Ag/graphite; Sn/polybutene (Sn/PB-1), which grows epitaxially, shows, in addition, a component at very low coverage, which can be attributed to a Sn-O-C bond at the Sn/PB-1 interface.
    Type of Medium: Electronic Resource
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