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Photoinduced current noise ina-Si: H solar cells (1991)

Galante, N. ; Tagliaferro, A.

Springer

Il nuovo cimento della Società Italiana di Fisica 13 (1991), S. 795-800

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ISSN: 0392-6737

Keywords: Noise processes and phenomena

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Summary Measurements of photoinduced current noise in amorphous silicon solar cells are reported. A 1/f n (n≈1) component, superimposed to a frequency-independent one due to simple shot noise, is attributed to the presence of defects limiting the conversion efficiency of the cell. In particular, large defects, such as local shorts or pin holes, can easily be detected since they are characterized by a very large increase of the 1/f n component. In general, even in the absence of such large defects, a correlation between the intensity of the 1/f n component and the cell conversion efficiency is found.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF02452225

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