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  • 1990-1994  (10)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Multiphonon-assisted energy transfer between Yb 4f shell and InP host (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7288-7295 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy transfer mechanism between an Yb 4f shell and an InP host was investigated, assuming that a nonradiative multiphonon process assists the energy transfer. The values of the energy involved in the energy transfer were determined from the results of optical and electrical experiments. Rate equations were solved to obtain the temperature dependence of the Yb intra-4f-shell luminescence decay time. The calculated results and the experimentally obtained temperature dependence agree well. The calculated temperature dependence of the Yb intra-4f-shell luminescence intensity also agrees with the experimental measurements. These results strongly suggest that phonon absorption and emission compensate the energy mismatch in the energy transfer processes. The calculations also indicate that the thermal quenching phenomenon is mainly determined by the energy mismatch between the recombination energy of an electron and a hole and the Yb 4f-shell energy between the excited and ground states. On the basis of the above formulation, the Yb intra-4f-shell luminescence intensity under hydrostatic pressure was also investigated theoretically and compared with experimental results. The 4f-shell luminescence recovery at elevated temperature under hydrostatic pressure was qualitatively explained in the framework of the present model. The characteristic behavior of the thermal quenching in other rare-earth doped semiconductors could also be explained qualitatively assuming that the energy transfer mechanism is similar to the one for InP:Yb. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358014
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  • 2
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of ytterbium-doped GaAs grown by metalorganic chemical vapor deposition (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3390-3393 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical and electrical properties of ytterbium-doped GaAs are investigated. The samples are grown by low-pressure metalorganic chemical vapor deposition using tris-cyclopentadienyl ytterbium as the ytterbium doping source. Yb concentrations in the GaAs epitaxial layers, which were measured by secondary ion mass spectroscopy, are well controlled by the source temperature up to 1.4×1019 cm−3, but GaAs:Yb samples do not show Yb intra-4f-shell photoluminescence. Hall effect and deep-level transient spectroscopy measurements reveal that the Yb doping forms deep electron traps or acceptor levels. The depth of such levels is likely to be responsible for the absence of Yb 4f photoluminescence in GaAs:Yb, in contrast to the strong Yb luminescence observed in InP:Yb.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346343
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  • 3
    Electronic Resource
    Electronic Resource
    Selective formation of an efficient Er-O luminescence center in GaAs by metalorganic chemical vapor deposition under an atmosphere containing oxygen (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1979-1982 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To investigate the effects of oxygen codoping on Er luminescence centers in GaAs, we grew Er-doped GaAs by low-pressure metalorganic chemical vapor deposition (MOCVD) and measured the photoluminescence spectrum due to the intra-4f-shell transition of Er. The spectrum of a sample grown in a pure hydrogen atmosphere was complicated, showing many lines and bands. The spectrum of a sample grown in a hydrogen atmosphere containing 0.2 ppm oxygen, on the other hand, was simple and had few lines. The spectrum of the oxygen-codoped sample showed higher peak intensities as well as higher integrated luminescence intensity in the 1.5–1.6 μm region. Secondary-ion mass spectroscopy revealed that the oxygen-codoped sample had a higher concentration of oxygen, indicating the formation of an Er-O complex center. One kind of optically active efficient Er-O complex luminescence center can, therefore, be selectively formed under suitable MOCVD growth conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354757
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal quenching mechanism of Yb intra-4f-shell luminescence in InP (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5604-5607 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal quenching mechanism of Yb intra-4f-shell luminescence were clarified by studying the temperature dependences of electrical and optical properties of Yb-doped InP samples. The quenching mechanism which depends on shallow donor concentration was found by comparing temperature dependences of Yb 4f-shell luminescence and free-carrier concentration. This mechanism is a localized Auger effect and is efficient below about 70 K in samples having a larger donor concentration than Yb concentration. At higher temperatures, another quenching mechanism was found to be efficient which does not depend on donor concentration. This quenching of Yb intra-4f-shell luminescence is accompanied by some increase of band-edge related luminescence. This phenomenon is explained by the energy back-transfer mechanism from the excited Yb 4f-shell to the InP host. Although an importance of the free-carrier Auger effect has been suggested in conducting materials, we propose that above two mechanisms dominate the quenching of the Yb 4f-shell luminescence in InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350173
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  • 5
    Electronic Resource
    Electronic Resource
    Er luminescence centers in GaAs grown by migration-enhanced epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1074-1076 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Er-doped GaAs has been grown by migration-enhanced epitaxy. The samples were grown at 300, 400, and 500 °C. Secondary ion mass spectroscopy measurements showed that the Er concentration in the grown epitaxial layer does not depend on the growth temperature between 300 and 500 °C. All samples showed luminescence due to the Er intra-4f-shell transition from the 4I13/2 excited state to the 4I15/2 ground state, but the spectra change drastically when the growth temperature is increased from 300 °C to 400 or 500 °C. The photoluminescence spectra of the samples grown above 400 °C are simpler than that of the sample grown at 300 °C. The spectrum of the sample grown at 300 °C became broad after annealing, whereas the spectra of the samples grown at 400 °C and above showed only changes in the relative intensity of the main luminescence lines. Some thermally stable Er luminescence centers seem to be preferentially formed at 400 and 500 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109837
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  • 6
    Electronic Resource
    Electronic Resource
    Direct verification of energy back transfer from Yb 4f-shell to InP host (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 965-967 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report direct verification of energy back transfer from a Yb 4f-shell to an InP host, which has been proposed as a quenching mechanism for the intrinsic thermal quenching of intra-4f-shell luminescence. Photoluminescence time decay of the band-edge related luminescence for a Yb-doped InP sample was examined. In the temperature region from 100 to 120 K, it was observed that the luminescence time-decay curve is composed of two exponential decay components. The decay-time constant of the slower component in the band-edge related luminescence is the same as that in the Yb 4f-shell luminescence. This fact clearly shows that there is an energy transfer between the Yb 4f-shell electronic state and the InP host electronic state, and the energy back-transfer mechanism is the cause of the intrinsic thermal quenching of the Yb intra-4f-shell luminescence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106476
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence Study of Yb-Doped InP under Low Temperature and Pressure (1993)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 117-118 (Jan. 1993), p. 465-470 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/59/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.117-118.465.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    Yb Intra-4f-Shell Luminescence in Yb- and Zn-Doped InP (1993)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 117-118 (Jan. 1993), p. 303-308 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/59/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.117-118.303.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    Pressure-Induced Recovery of the 4f-Shell Luminescence of Yb Doped in InP at Near Room Temperature (1993)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 143-147 (Oct. 1993), p. 731-736 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/00/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.143-147.731.pdf
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  • 10
    Electronic Resource
    Electronic Resource
    Energy Transfer in Rare-Earth-Doped III-V Semiconductors (1992)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 83-87 (Jan. 1992), p. 641-652 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/21/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.83-87.641.pdf
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