ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Reflection high energy and low energy electron diffraction, along with high resolution photoemission studies reveal that ideally H-terminated Si(111) surfaces, H/Si(111)-(1×1) prepared by wet chemical etching, transform in ultrahigh vacuum into atomically clean Si(111)7×7 surfaces upon hydrogen desorption at temperatures as low as 550 °C.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111288
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