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  • 1990-1994  (5)
Materialart
Erscheinungszeitraum
Jahr
  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4705-4712 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Carrier concentration and mobility of unintentionally doped InP layers, grown directly on Si using metal-organic vapor-phase epitaxy, have been studied. The formation of antiphase domains (APDs) was found to depend on annealing of the Si substrate in an AsH3 flow prior to epitaxial growth. Dislocation densities determined by the wet chemical delineation technique were (8±1)×107 cm−3, seemingly uncorrelated to APDs in the layers. In addition to a shallow donor and a compensating acceptor, a deep donor was observed affecting the temperature dependence of the free-electron concentration between 77 and 300 K. The electron mobility in this temperature range could be described in terms of the scattering mechanisms which are dominant in homoepitaxial InP, namely, scattering due to polar optical phonons, to ionized impurities, and to space charges. Electron scattering due to either of these mechanisms was strongly influenced by the occurrence of antiphase boundaries (APBs). The space-charge density as well as the degree of compensation of the epitaxial layers increases with the density of APBs. Degraded 300 K mobilities were obtained indicating the effect of local stress at the APB.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4366-4368 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have developed a new selective-growth process of InP on exactly (100)-oriented Si substrate in a conventional low-pressure metal-organic vapor-phase-epitaxy system. In this process, the InP epitaxial layer was deposited on a photolithographically patterned InP-buffer film without an additional dielectric mask during the growth. Under our experimental conditions, the InP growth has a very high selectivity and the InP epitaxial layer is antiphase-domain free. Experimental results show that the undesirable sidewall-growth interaction in conventional dielectric mask selective-growth processes is effectively suppressed. Spatially resolved photoluminescence displayed very high optical quality of patterned InP layers compared to those grown on blanket substrates.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5889-5891 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We used spectroscopic ellipsometry to analyze the refractive index and the absorption coefficient of thin buffer layers of InP grown by metalorganic vapor phase epitaxy on Si substrates. We found a pronounced influence on the crystallographic properties of the subsequently grown InP main layer. The drastically increased optical absorption of the buffer layers is possibly caused by a high density in misfit dislocations or twins originating from the difference in lattice constants of InP and Si.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 32-33 (Dec. 1993), p. 445-450 
    ISSN: 1662-9779
    Quelle: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Thema: Physik
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    Springer
    Acta neurochirurgica 127 (1994), S. 27-31 
    ISSN: 0942-0940
    Schlagwort(e): Vasospasm ; subarachnoid hemorrhage ; clinical grade ; age ; aneurysm ; statistical analysis ; logistic regression
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Medizin
    Notizen: Summary A retrospective review of patients presenting to our institution with aneurysmal subarachnoid hemorrhage between 1980–1990 was accomplished. Eleven variables were examined as to their relationship to clinical vasospasm: age, sex, clinical grade, amount of subarachnoid blood on CT, aneurysm location, incidence of vasospasm, incidence of complications, use of calcium channel blockers, time to surgery, length of stay, and outcome. Data were analyzed with univariate and multivariate logistical regression methodology. By univariate analysis, age under 20, amount of subarachnoid hemorrhage, and clinical grade were associated with a higher risk of vasospasm. Using multivariate logistic regression, these factors, along with age under 35, were correlated as being predictive of clinical vasospasm. When all patients are grouped into either good or bad outcome, and a similar analysis is performed, only in the poor outcome group is the amount of subarachnoid hemorrhage and clinical grade correlated with vasospasm. This suggests that there is a group of patients with a predisposition to vasospasm that is independent of subarachnoid hemorrhage and clinical grade, and that these patients may have a more favorable outcome.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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