Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 3473-3475
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial growth processes of Si from ArF laser-excited Si2H6 supersonic free jets have been investigated using reflection high-energy electron diffraction, growth rate, and atomic force microscopy measurements. Layer-by-layer epitaxial growth was observed at substrate temperature Ts=670 °C regardless of the laser excitation. However, it was found that island growth was predominant at Ts=550 °C without the laser excitation, while layer-by-layer growth occurred by using the ArF laser-excited Si2H6 jet probably due to an enhancement of surface reactions induced by precursor species obtained from laser-excited Si2H6 .
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110124
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