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  • 1990-1994  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3593-3599 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents a method for the measurement of doping fluctuations in high resistivity silicon wafers. Spatial fluctuations of doping are derived from the knowledge of the electrostatic potential in a completely depleted semiconductor bulk. The potential variations are indirectly measured through the analysis of the trajectories of majority carriers drifting within the depleted semiconductor material. Regions of semiconductors up to the full wafer can be investigated. An example of mapping along parallel lines of a floating zone 2 K Ω cm silicon wafer over an area of 0.4×0.8 cm2 is presented. The relative sensitivity of the method is better than 1%.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 56 (1992), S. S74 
    ISSN: 1434-6052
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract In recent years quantum electrodynamics (QED) vacuum polarization corrections (at low momentum transfer) has been tested in several physical situations using muonic atoms: this has permitted a direct check for different values ofZα [1–6]. The vacuum polarization test obtained by measuring the 2S-2P energy difference, by means of laser-induced transition in muonic helium, has reached the 0.17% level. Such a test is limited by the uncertainty of the helium electric form factor; in order to overcome this limit, a scheme to measure the 3D-3P energy difference in muonic helium has been suggested and a test measurement performed. In this article we wish to make some comments on this experimental method and discuss its future possibilities.
    Type of Medium: Electronic Resource
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