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  • 1990-1994  (3)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Fabrication and properties of epitaxial ferroelectric heterostructures with (SrRuO3) isotropic metallic oxide electrodes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2570-2572 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial ferroelectric SrRuO3/Pb(Zr0.52Ti0.48)O3/SrRuO3 heterostructures have been fabricated employing isotropic metallic oxide electrodes on (100) SrTiO3 and (100) Si with an yttria stabilized zirconia buffer layer. The structures have been grown in situ by 90° off-axis sputtering, which allows the growth of uniform stoichiometric films over large areas with excellent step coverage. X-ray diffraction, Rutherford backscattering spectroscopy, and cross-sectional transmission electron microscopy reveal high crystalline quality and coherent interfaces. They exhibit superior fatigue characteristics over those made with metal electrodes, showing little degradation over 1010 cycles, with a large remnant polarization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110436
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Precipitates in YBa2Cu3O7−δ thin films annealed at low oxygen partial pressure (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3201-3203 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the precipitates in YBa2Cu3O7−δ(YBCO) thin films grown by the BaF2 process in pO2=4 Torr and 700 °C. While stoichiometric films result in BaCuO2 surface precipitates, we have found Y2Cu2O5 precipitates embedded in the matrix of the same film. Off stoichiometric films with Ba/Y〈1.5 have a precipitate-free surface but with higher abundance of Y2Cu2O5 in the film matrix. The estimated densities of the two precipitates favor a stoichiometric YBCO film matrix. This behavior is not explainable in terms of phase equilibria and is attributed to kinetic effects. The electrical properties of the films degrade as the Ba/Y ratio deviates from 2.00.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109624
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Single domain high Tc La2−xSrxCuO4 films with tilted CuO2 planes (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1905-1907 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The two fold degeneracy inherent to epitaxial growth of high Tc films on (101) perovskite substrates has been removed successfully. This is demonstrated by single domain, (103) oriented La2−xSrxCuO4 films of 0.04≤x≤0.34 on vicinal (101) SrTiO3 substrates using 90° off-axis sputtering. (101) substrates that have the surface normal rotated about [010] by 0.5°–3.5° produced essentially single crystal films with the c-axis direction determined by the sense of the miscut. Misoriented antidomains (103)' have been eliminated effectively to a percentage less than 1 part in 104. The mechanism for symmetry breaking is understood on the basis of a surface step model in which the energetics promoting single domain growth is derived from nucleation and epitaxy on the (001) face found at surface steps of vicinal substrates. Furthermore, the incommensuration of the c axis interplanar spacings with the a, b, plane lattice parameters in the La2−xSrxCuO4 structure provides a natural selection of (103) domains over (103)' domains. The model predicts the application to other high Tc materials such as the Bi2Sr2CanCun+1Ox, and the Tl2Ba2CanCun+1Ox families.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107149
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    Paper (German National Licenses)
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