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  • 1990-1994  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Lifetime measurements on silicon-on-insulator wafers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 189-190 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report noncontact measurements of the effective minority carrier lifetime in the superficial silicon layer of silicon-on-insulator wafers. The carriers are excited by a pulse of short-wavelength photons (λ≤350 nm), all of which are absorbed in the first 500 A(ring) of the silicon layer. The carriers are detected by the change in microwave reflectance in a resonant circuit to which the wafer is coupled. The results obtained vary from ∼3 μs for a three year old separation by implanted oxygen (SIMOX) wafer to ∼25 μs for current vendor SIMOX and bond-etchback samples. The variation in free surface recombination velocity is eliminated by HF passivating the samples prior to measurement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110395
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    High hydrogen concentrations produced by segregation into p+ layers in silicon (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 198-200 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium-implanted p+ layers in Si were exposed to atomic hydrogen from a plasma. It was found that very large hydrogen concentrations, up to 7.5 times larger than the peak Ga concentration of 7×1019/cm3, segregated into the p+ layer during treatment at 200 °C. The shape of the hydrogen concentration profile was similar to that of the Ga profile. Ion channeling showed that the H atoms did not occupy simple high-symmetry sites in the lattice, and electron microscopy revealed the presence of extended {111} stacking fault defects associated with the layer of high hydrogen concentration. A mechanism to account for these findings is suggested.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105964
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    An Isothermal Pumping Mechanism for the Introduction of High Hydrogen Concentrations in p〈sup〉+〈/sup〉 Layers in Silicon (1992)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 83-87 (Jan. 1992), p. 39-44 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/21/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.83-87.39.pdf
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Carrier recombination and high-barrier Schottky diodes on silicon (1990)
    Springer
    Applied physics 51 (1990), S. 451-454 
    Details
    ISSN: 1432-0630
    Keywords: 73.30+y ; 73.50.Gr ; 73.40.Ei
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Small-area high-barrier Schottky diodes have a very high dynamic resistance. Consequently, special care is needed when measuring the current-voltage characteristic of such diodes. The reported observation of carrier recombination in the depletion layer of high-barrier IrSi/Si Schottky diodes at room temperature is shown to be due to instrumental loading of the diodes. Careful measurements show that carrier recombination is observed only below 200 K and is dependent on the dimension of the diode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324725
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    Paper (German National Licenses)
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