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  • 1990-1994  (13)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Complex images of a ground electrode in layered soils (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 569-574 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, the complex image method is used to model ground electrodes in layered soils. The image locations and amplitudes are determined through a simple Prony method [R. W. Hamming, Numerical Methods for Scientists and Engineers (Dover, New York, 1973), pp. 620–622]. As an example, a toroidal electrode in a four-layer soil is modeled using one real image and four complex images. The results obtained are identical to those reported recently in the literature, given by more than 10 000 images using the conventional electrostatic image method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350407
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Spontaneous pattern on the corroded surface of metal: Phenomenon and theory (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3625-3629 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A spontaneous pattern was found on the corroded surface of 1Cr18Ni9Ti stainless steel which was subjected to a crude oil containing naphthenic acid at temperature about 330 °C. The high regularity, the periodicity, and SO2 symmetry of the pattern imply that a spontaneous dissipative structure arose in this corrosion system. It was also found that the distribution of chemical elements on the corroded surface was in accordance with the morphologic pattern. A new theory, which is based on the linear perturbation method and in which the shift of boundary is considered, is proposed to characterize the formation of the large-scale spontaneous pattern, reveal the mechanism, and explain this phenomenon in the corrosion system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346324
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    High-power coherent surface-emitting antiguided diode laser arrays (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 627-629 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-power coherent GaAs/GaAlAs surface-emitting antiguided laser arrays with dry etched micromirrors have been demonstrated for the first time. Both the deflecting 45° and 90° micromirrors were fabricated by ion beam etching. Twice diffraction-limited far-field beam profiles were obtained to pulsed output powers as high as 550 mW, with 220 mW in the central lobe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107828
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    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    High power cw operation of GaAs/GaAlAs surface-emitting lasers mounted in the junction-up configuration (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1037-1039 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High power cw operation of horizontal cavity monolithic GaAs/GaAlAs surface-emitting lasers with all dry etched micromirrors in the junction-up configuration has been demonstrated for the first time. The 45° and 90° mirrors of the devices were fabricated by ion beam etching and reactive ion etching techniques, respectively. Typical threshold current densities of less than 360 A/cm2, external differential efficiencies of 22% (0.34 W/A) from the emitting facet, and output powers in excess of 280 mW were achieved under cw operation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106337
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    635 nm GaInP/GaAlInP surface-emitting laser diodes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3262-3264 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monolithic, in-plane visible surface-emitting laser diodes operating at 635 nm have been demonstrated. Both the deflecting 45° and 90° micromirrors were fabricated by ion beam etching. An interesting self-optical-annealing phenomenon was observed from these facet-etched GaInP/GaAlInP devices. By employing this unique characteristic, pulsed output powers of 170 mW, and 70 mW at room temperature were achieved from etched-cleaved and etched-etched uncoated devices, respectively. Output powers will increase to 725 mW with facet coatings.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110168
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    High-power cw operation of InGaAs/GaAs surface-emitting lasers with 45° intracavity micro-mirrors (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2085-2087 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-power cw operation of horizontal-cavity, monolithic InGaAs/GaAs surface-emitting lasers with all dry etched micro-mirrors has been demonstrated for the first time. The 45° and 90° micro-mirrors of the devices were fabricated by ion-beam etching and reactive ion etching techniques, respectively. Threshold-current densities of less than 500 A/cm2, external differential quantum efficiencies of 10% (0.12 W/A) from the emitting facet, and output powers in excess of 100 mW were achieved from uncoated devices driven under cw operation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106140
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Monolithic two-dimensional surface-emitting diode laser arrays mounted in the junction-down configuration (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2663-2665 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first achievement of large area (0.5 cm2) monolithic two-dimensional surface-emitting arrays mounted in the junction-down configuration. Device fabrication involves dry etching of 45°, and vertical micromirrors with ±2° tolerances and 〈0.2 μm RMS smoothness, integration of 100-μm-thick current-spreading electrodes for minimizing ohmic loss, large area packaging, and mounting to heat exchangers for long pulse and minimum chirp operation. Uniform lasing is achieved from 0.2×0.5 cm2 and 0.5×1 cm2 active area junction-down monolithic arrays (120 and 600 emitters, respectively) using 100 μs long pulses at a 1% duty cycle. Differential quantum efficiencies of ≥ (R18)40% and 7% are achieved for rows of 12 emitters, and for 0.2×0.5 cm2 active area arrays, respectively. The decrease in efficiency with increased area is found to be due to current leakage, which in turn limits the 2-D array emitted optical-power density to 150 W/cm2. Wavelength chirp in these devices is measured to be 〈4 nm at twice the threshold current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105932
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Injection locking of leaky-wave coupled resonant optical waveguide arrays (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 547-549 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Injection locking of mutually coupled resonant antiguided arrays, consisting of up to four ten-element arrays, has been demonstrated. External injection causes single-longitudinal mode operation, and enhanced phase-locking of the coupled arrays. The injected signal is distributed via leaky-wave coupling, so that the master-oscillator signal injected into one element (3 μm) of one array locks the whole array ensemble (223 μm wide aperture). Wavelength tuning is achieved over a 12 A(ring) spectral range for two coupled arrays, and has no impact on the coupled array far-field pattern.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108906
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Surface-emitting lasers with optical cavity along the [111] direction (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 689-691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Monolithic horizontal cavity GaAs/GaAlAs surface-emitting lasers with cavities along the [111] direction have been demonstrated for the first time. The vertical facet of the devices was fabricated by reactive-ion etching and the 45° outcoupler micromirror was fabricated by ion-beam etching. Typical uncoated devices have threshold current densities of 330 A/cm2, which is the lowest ever reported for GaAs/GaAlAs surface-emitting lasers. The coated devices have external differential quantum efficiencies as high as 40% (0.6 W/A), and output powers (pulsed) in excess of 3 W. The output power is the highest ever reported from GaAs/GaAlAs horizontal cavity surface-emitting lasers with dry-etched outcoupler micromirrors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106538
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Injection locking of antiguided resonant optical waveguide arrays (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 26-28 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first demonstration of injection locking of strong index-guided large-aperture devices [20-element resonant-optical-waveguide (ROW) antiguided arrays] under pulsed operation. Full locking was achieved far above the threshold level (2.6×Ith) by injecting light from a master oscillator in a direction normal to the diode facet and only in one element of the 20-element ROW array. Single-frequency tuning is achieved over a ≥30 A(ring) spectral range for emission in the 8500 A(ring) region, while the beam pattern remains spatially stable and diffraction limited. For devices operating nearly resonant (i.e., beam width 2 to 3× the diffraction limit) injection locking accomplishes both single-frequency as well as diffraction-limited-beam operation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107355
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    Paper (German National Licenses)
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