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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of nitrides NdFe12−xMoxNi1−δ with x=1–2.5 and δ≤0.2 have been investigated. All nitrides are of the ThMn12 tetragonal structure with the unit cell volumes about 3% larger than their parent alloys. Curie temperatures are enhanced by nitrogenation about 160 K and increase linearly with decreasing content x of Mo. NdFe12−xMox exhibits a weak uniaxial anisotropy with a value of BA less than 0.6 T when x≥1.75. After nitrogenation, all nitrides have a strong uniaxial anisotropy. Values of the anisotropy field BA increase monotonically from 6.35 T for x=2.5 up to 9.5 T for x=1 as decreasing content x of Mo. Saturation magnetizations also increase monotonically with decreasing content x.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6226-6228 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic phase diagram of the alloy series NdFe12−xMox (x=1.0∼2.5) is obtained. Below the Curie temperature, the ferromagnetic phase is divided into three regions: Uniaxial, canted 1, and canted 2. At a temperature of Tsr1 (below 200 K) a spin reorientation transition (SRT) was observed for all the samples, and at Tsr2 (above 200 K) another SRT was found for samples with Mo concentration 1.5〈x〈1.75. At room temperature the easy direction of magnetization (EDM) of NdFe12−xMox changes from the c axis to a canted structure with increasing Mo concentration, with a critical composition of x=1.56. At low temperatures (below 100 K) all NdFe12−xMox compounds exhibit a canted moment structure.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current conduction through in situ annealed low-temperature gallium arsenide (LT GaAs) grown by molecular beam epitaxy (MBE) has been studied using Schottky diodes. The dominant transport mechanism in these films was found to be space-charge-limited current conduction in the presence of deep level states. We also examined two LT GaAs films, one with initially 4000 A(ring) thick subsequently etched back to 2000 A(ring) and the other sample with an initial thickness of 2400 A(ring), and found that the excess arsenic redistribution or clustering, carrier trap levels, and concentration depend strongly on the initial thickness of the LT GaAs film.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Colloid & polymer science 270 (1992), S. 97-105 
    ISSN: 1435-1536
    Keywords: Liquidcrystalpolymer (LCP) ; polyethermide (PEI) ; structure ; etching ; processing behaviour ; rheology ; mechanical properties
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract An etching technique for making visible the morphology of blends composed of polyetherimide and a liquid crystalline fully aromatic copolyester (LCP) has been developed. The four organic solvents-tetrachloroethane, N-methylpyrrolidone (NMP), dimethylformamide (DMF) and dimethylacetamide (DMAc)-selectively etch the polyetherimide without attacking the LCP component. By adjusting the etching conditions to the respective conditions prevailing within the samples, all the four solvents yielded equally good results across the entire concentration range investigated (from 20/80 to 80/20 percent by weight of LCP/PEI). The viscosith of the LCPs decreases markedly with increasing shear rate. The large shear rate gradient from the mould edges to the centre results in different deformations of different volume elements within the melt. The resulting frozenin morphologies can be visualized with the new etching technique. This allows one to explain certain correlations between morphology and mechnical properties of the respective samples.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Somatic cell and molecular genetics 18 (1992), S. 319-324 
    ISSN: 1572-9931
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract Three hundred fifteen radiation hybrids (RH) were isolated using a monochromosomal cell hybrid containing chromosome 16 only. A panel of 18 RH, which showed breakpoints among four markers (3.15, 26.6, 3′HVR, and 5′HVR) mapping in the distal portion of 16p, were selected and characterized for the retention of nine additional DNA sequences already localized in this region, and for one centromeric sequence. One or more breakpoints were identified in nine of the 12 intervals defined by the 13 single-copy sequences used. This panel of RH represents a tool for the construction of a detailed physical map of the distal part of 16p and for cloning sequences located in the proximity of disease genes. Three inter-Alu DNA sequences, amplified from one of these RH containing the autosomal dominant polycystic kidney disease (PKD1) gene, were cloned and mapped in the panel. Sequencing of the ends of one of the three clones showed a (CAAA) n repeat, which revealed a two-allele polymorphism.
    Type of Medium: Electronic Resource
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