Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Energy & fuels 7 (1993), S. 710-720 
    ISSN: 1520-5029
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 276-286 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The rate coefficient for the reaction of F+HFCO has been determined over the temperature range 298–368 K by monitoring the appearance rate of HF infrared chemiluminescence using the infrared multiphoton dissociation-infrared chemiluminescence technique. Results, expressed in the Arrhenius form k(T) =4.4±2.6×10−11 exp[−1800±400/RT] cm3 molecule−1 s−1, are compared with the barrier height calculated using ab initio molecular orbital theory. The rate coefficient is theoretically discussed with the aid of essential features of the potential energy surface for the F+HFCO system and the potential importance of the reaction is considered. A rate coefficient for deactivation of excited HF by HFCO is reported as 1.2±0.2×10−12 cm3 molecule−1 s−1.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 1441-1448 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The low-lying electronic states of Si−2 and Si2 were studied using both photoelectron spectroscopy and threshold photodetachment spectroscopy of Si−2 . Our measurements show that the ground state of Si2 is the X 3Σ−g state and that the X 3Σ−g–D 3Πu splitting is 0.083±0.010 eV. Additional spectroscopic constants for the X 3Σ−g, D 3Πu, a 1Δg, b 1Πu and c 1Σ+g states of Si2 were also determined. For Si−2 , the first two electronic states were identified as: 2Πu (Te =0, re =2.207±0.005 A(ring), and ν=533±5 cm−1) and 2Σ+g (Te =0.025±0.010 eV, re =2.116±0.005 A(ring), and ν=528±10 cm−1). The electron affinity for Si2 was found to be 2.176±0.002 eV. Our results provide definitive orderings and splittings for the low-lying electronic states in both Si2 and Si−2 .
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 7587-7596 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Reaction pathways for the decomposition of HFCO and HClCO on the ground state potential energy surface have been studied by using ab initio methods. Heats of reaction and barrier heights have been computed by using Møller–Plesset perturbation theory. Spin projections have been applied to free radical dissociation pathways for annihilation of spin contamination. The favorable dissociation path predicted is molecular elimination of HX to yield CO. The substitution effects on decomposition pathways of HFCO and HClCO are also examined.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2072-2074 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully fabricated epitaxially grown YBa2Cu3O7/PrBa2Cu3O7 (YBCO/PBCO) multilayer thin films on SrTiO3 and LaAlO3 substrates by dc/rf magnetron sputtering. The thicknesses of YBCO and PBCO varied from 1 to 8 unit cells. Satellite peaks in x-ray diffraction patterns clearly indicate the formation of periodic modulation structures of different wavelengths. At a certain thickness of the YBCO layer, the zero resistance transition temperature Tc0 decreased with the increase of the PBCO layer thickness. In contrast, Tc0 increased with the increase of the YBCO layer thickness at a constant PBCO layer thickness.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 7624-7627 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Cambridge : Cambridge University Press
    The @China quarterly 130 (1992), S. 442-443 
    ISSN: 0305-7410
    Source: Cambridge Journals Digital Archives
    Topics: Linguistics and Literary Studies , History , Political Science , Sociology , Economics
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 577-579 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-stimulated modifications to pure C60 films grown on GaAs(110) have been induced by ∼3 eV electrons from a scanning tunneling microscope (STM) and from 1500 eV electrons from an electron gun. In the STM-modified area, a variety of apparent molecular sizes and shapes were observed with intramolecular contrast and a blurring of intermolecular distinction. Surfaces bombarded by 1500 eV electrons showed modifications over larger areas and these results suggested a growth mode for polymerization. Annealing of such modified surfaces restored the ordered fcc structure.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5502-5504 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The topic of demagnetization has always been considered important to the area of magnetics in general. Whether it is required to characterize the initial permeability of a premagnetized sample or to erase, nondestructively, previously recorded data on disks or tapes, demagnetization processes are indispensable. Theoretically, demagnetization can be achieved by applying infinite ac field cycles with slowly decaying amplitudes. In practice, however, only a finite subset of this sequence may be applied. As a result, achieving the demagnetized state, or even a zero residual magnetization state, becomes uncertain. The purpose of this paper is to present an efficient Preisach-type demagnetization algorithm that can lead to a zero residual magnetization state within few field cycles. While this state might not fully match the demagnetized state, it can be regarded as a good approximation especially for data erasure applications. The algorithm has been experimentally tested and compared to particular demagnetization techniques employing finite ac field cycles with decaying amplitudes. Some sample results of this experimental testing are reported in the paper.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7231-7238 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of external hydrostatic pressure up to 7 kbar on the Au-Ge binary phase diagram and on the arsenic sublimation are evaluated by thermodynamic calculations. Experimental observations in the eutectic Au-28 at. % Ge/GaAs contacts which were annealed at vacuum and in a 7 kbar argon gas, respectively, are taken as illustrative examples for the comparison with the calculated results. It is concluded that pressures up to 7 kbar shift only slightly the phase boundaries in the Au-Ge phase diagram that were obtained in standard conditions (1 atm) and a pure argon gas with a pressure of 7 kbar acts as a good capsulation to prevent species As from sublimation. The measurements indicate that the film/GaAs interface and the film surface in the contacts annealed at 7 kbar are rich in Ge and are morphologically smooth. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...