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  • 1990-1994  (7)
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Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Modellization of the Growth of Three Intermediate Phases (1994)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 155-156 (May 1994), p. 59-70 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/00/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.155-156.59.pdf
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    High concentration phosphorus doping of polycrystalline silicon by low temperature direct vapor phase diffusion of phosphine followed by rapid thermal annealing (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3461-3463 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phosphorus doping of polycrystalline silicon by direct diffusion of PH3 at 685 and 785 °C followed by rapid thermal annealing (RTA) has been investigated. Unlike at 785 °C, the dopant profile is not uniform at 685 °C but becomes so after RTA at 1050 °C for 10 s, as revealed by secondary ion mass spectroscopy (SIMS). In the absence of any protection layer, RTA in N2 causes an out-diffusion of ∼50% of P from the sample diffused at 785 °C, although it activates ∼100% of the remaining P atoms as indicated by Hall and SIMS measurements. In contrast, RTA in O2 results in 95% activation of the incorporated P from the same sample, accompanying an oxidation of ∼7 nm polycrystalline Si. As regards the sample diffused at 685 °C, RTA in N2 does not cause any out-diffusion but activates less than 80% of the incorporated P atoms. This difference in behavior is attributed to the tendency to attain equilibrium concentrations of P in the crystallites and at the grain boundaries at the RTA temperature. The highest active P concentration achieved is 2.0×1020 cm−3 at 785 °C followed by RTA in O2 yielding a resistivity as low as 9×10−4 Ω cm. The simplicity of this relatively low temperature process is attractive for a single-wafer multisequence fabrication scheme.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111241
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    An experimental study of the influence of oxygen on silicide formation with tungsten deposited from tungsten hexafluoride (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 213-219 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten disilicide (WSi2) was formed by annealing tungsten films deposited by low-pressure chemical vapor deposition on 〈100〉-silicon substrates. The influence of oxygen on the silicidation rate was studied. Si wafers with different oxygen content in the form of Czochralski, float-zone, and epitaxial wafers were used. Oxygen was also ion implanted into either the silicon substrate or the as-deposited tungsten film. The Rutherford backscattering technique was used to follow the progress of the silicidation. The silicidation rate was found to be dependent on the oxygen content of the Si substrates. The rate was lowest for Czochralski substrates and highest for float-zone substrates. Secondary ion mass spectroscopy was used to study the oxygen and fluorine profiles in the films prior to and after silicidation. Growth of WSi2 was found to be retarded concurrently with a pile-up of fluorine at the tungsten side of the W/WSi2 interface and a gettering of oxygen from the annealing atmosphere at the interface. Growth of WSi2 was then transferred to the tungsten surface. Oxygen implantation into silicon and tungsten, respectively, reduced the rate of silicide formation. Oxygen implantation into tungsten altered the distribution of fluorine and suppressed WSi2 growth at the tungsten surface. The observations led to a conceptual model, which ascribes the retardation in the growth of the inner WSi2 to a"poisoning'' effect caused by the increase of oxygen and fluorine levels at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347753
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Investigation on the quantum well structure of a GaAs/Al0.3Ga0.7As superlattice grown on a misoriented substrate (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3795-3797 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyzed the Raman spectra and x-ray diffraction of two GaAs/Al0.3Ga0.7As superlattices grown by molecular-beam epitaxy on a 4 ° misoriented (001) GaAs substrate and an exactly (001)-oriented GaAs substrate respectively. From the frequency shifts of the longitudinal-optical- (LO) confined phonons in the Raman spectra and the variation in linewidths of both the LO-confined phonons and the satellite peaks in x-ray diffraction, we found that the 4 ° misorientation of the GaAs substrate from (001) toward [110] direction improves the interface quality of the superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346283
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Temperature control during chemical vapor deposition of polycrystalline silicon with substrate heating by microwaves (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3153-3155 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Contactless and accurate measurement of the temperature is an important issue in rapid thermal processing. In this letter we report on the variation of the emissivity of the surface during chemical vapor deposition of polycrystalline silicon onto oxidized silicon wafers. The observed periodic change in the emissivity of the polycrystalline silicon/silicon dioxide/silicon structure is due to interference phenomena in the growing layer. In these experiments the silicon wafers were heated by direct absorption of microwaves in a single wafer reactor. It is shown that with this method of heating, the change of emissivity does not influence the actual temperature of the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109112
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Structure of thiamine bromide sesquihydrate (1992)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 48 (1992), S. 1951-1954 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270192002257
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Interactions of thiamine with anions. Structure of thiamine dithiocyanate (1993)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 49 (1993), S. 1178-1180 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270192012630
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    Paper (German National Licenses)
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