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  • 1990-1994  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8051-8054 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of a Si-doped Al0.3Ga0.7As alloy are studied as a function of the Si dopant concentration by means of photoluminescence measurements. The photoluminescence spectra show peaks due to electron Si acceptors and Si-related complex-defects transitions, which we tentatively attribute to Si acceptor coupled to an As vacancy (SiAs-VAs) and Si donor coupled to a Ga(Al) vacancy (SiIII-VIII). We show that the importance of each of these defects to the alloy optical properties is strongly dependent on the growing parameters. Spectrum for a planar-doped sample also showing peaks related to Si complex defects is presented. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 820-823 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the current density as a function of the applied bias have been performed to study the electronic properties of the Al:n-GaAs(100) interface. The samples were grown by molecular beam epitaxy. A Si planar doping was placed in GaAs(100) at different depths underneath the metal-semiconductor interface and the charge transport across this interface has been investigated. An increasing tunneling contribution to the net current through the Schottky barrier has been observed by decreasing the planar doping depth. For sufficiently small depths, the tunneling current dominated. Planar doping near the metal-semiconductor interface was found to be equivalent, concerning charge transport properties, to a bulk semiconductor doped well beyond the currently achievable limit.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2258-2260 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photo-Hall free electron concentrations were measured on molecular beam epitaxy grown silicon planar-doped GaAs samples, with silicon nominal concentration ranging from 1.4×1012 to 8.8×1013 cm−2, as function of temperature. We found conclusive results showing competition between positive photoconductivity and negative persistent photoconductivity effects. At temperatures below a critical Tc, the negative photoconductivity effect is dominant, while above Tc the positive effect dominates. We also found some evidence that the positive effect is related to spatial charge separation and that the negative effect is related to the DX center.
    Type of Medium: Electronic Resource
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