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Capture of photoexcited carriers by a laser structure (1989)

Deveaud, B. ; Clérot, F. ; Regreny, A. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 55 (1989), S. 2646-2648

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The capture of photoexcited carriers in different laser structures is investigated by subpicosecond luminescence spectroscopy. The capture time at 20 and 80 K is monitored by the decay of the luminescence of the confinement layers. It is found to range between 2 and 3 ps for both linear and parabolic grading, and to be much longer in nongraded structures. The improvement of the capture in the case of graded structures is due to the quasi-electric field experienced by the carriers, and might allow the devices to run at much higher frequencies.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.101962

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