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  • Digitale Medien  (3)
  • 1985-1989  (3)
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  • Digitale Medien  (3)
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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 811-814 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Polycrystalline gallium arsenide films of 10-μm thickness deposited on tungsten/graphite substrates by the reaction between gallium, hydrogen chloride, and arsine have been used for the fabrication of thin-film homojunction solar cells. The major problem associated with polycrystalline gallium arsenide thin-film cells is the grain-boundary shunting effect. In order to prepare solar cells with conversion efficiency higher than 10%, gallium arsenide films with large grains are necessary. Unlike gallium arsenide, germanium films can be easily recrystallized to enhance the grain size. Thin-film gallium arsenide solar cells of the p+/n configuration with an AM1 efficiency of about 10% have been prepared using recrystallized germanium and large-grain germanium substrates.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4268-4272 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Hydrogenated amorphous silicon (a-Si:H) films have been deposited on Corning 7059 glass and other substrates by the thermal decomposition of disilane in a helium flow. The deposition rate of a-Si:H films in a He atmosphere has been found to be significantly higher than that deposited in a hydrogen atmosphere under the same conditions. The a-Si:H films deposited in a He atmosphere showed improved structural properties as compared with those deposited in a hydrogen atmosphere. The properties of a-Si:H films deposited in a helium atmosphere such as density, photoconductivity, minority-carrier diffusion length, gap-state density, etc., have been determined. These films appear to have better electronic properties than the chemical-vapor-deposited a-Si:H films heretofore reported.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Springer
    Journal of industrial microbiology and biotechnology 2 (1987), S. 195-200 
    ISSN: 1476-5535
    Schlagwort(e): Phytase ; Phytic acid ; Solid state fermentation ; Aspergillus ficuum
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Biologie , Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Notizen: Summary Phytase production byAspergillus ficuum was studied using solid state cultivation on several cereal grains and legume seeds. The microbial phytase was used to hydrolyze the phytate in soybean meal and cotton seed meal. Wheat bran, soybean meal, cottonseed meal and corn meal supported good fungal growth and yielded a high level of phytase when an adequate amount of moisture was present. The level of phytase production on solid substrate was higher than that obtained by submerged liquid fermentation. Higher levels of phosphorus (more than 10 mg Pi/100 g substrate) in the growth medium (static culture) inhibited phytase synthesis, and the degree of phosphorus inhibition was less apparent in semisolid medium than in liquid medium. A static cultivation on semisolid substrate produced a higher level of phytase (2-20-fold) than that obtained by agitated cultivation. The minimal amount of water required for growth and enzyme production on those substrates was about 15%, while the optimum level for phytase production was between 25 and 35% and that for cell growth was above 50%. Optimum pH for phytase production was between 4 and 6.A ficuum grew well on raw (unheated) substrate containing a minimal amount of water and produced as much phytase as on heated substrate. About half of the phytic acid in soybean meal and cottonseed meal was hydrolyzed by treatment withA. ficuum phytase.
    Materialart: Digitale Medien
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