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  • Electronic Resource  (3)
  • 1985-1989  (3)
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  • Electronic Resource  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4517-4519 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of channeling of aluminum in the silicon crystal is reported. Depth distributions measured by secondary ion mass spectrometry are reported for 40-, 75-, and 150-keV aluminum channeled in the 〈100〉 and 〈110〉 directions of silicon. The profile dependence on alignment angle is shown for 150-keV aluminum in the 〈110〉 of silicon. Aluminum has low electronic stopping in silicon and corresponding deep channeled profiles are observed for aligned implants and deep channeling tails are observed on random implants. The maximum channeling range for 150-keV Al in 〈100〉 silicon is about 2.8 μm and is about 6.4 μm in 〈110〉 silicon. Some ions will reach the maximum channeling range even for 2° misalignment. Many of the deep channeling tails and "supertails'' reported in earlier literature can be explained by the normal channeling of aluminum in silicon.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1355-1358 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of regrowth of implantation-damaged (100) and (111) Si was investigated by measuring the depth distribution of implanted Ag atoms following annealing at 550 °C for fluences of 1×1012 to 1×1015 cm−2. Cross-section transmission electron microscope measurements were made for a few conditions to compare damage depth distributions. Other factors studied were anneal time, Si growth technique, Ag atom densities, and the transition region between amorphous and crystalline Si. Ranges and profile shape factors are reported for 150, 300, 450, and 600 keV Ag implants into Si.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2806-2809 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Acceptor depth distributions measured using differential capitance-voltage profiling, and atom depth distributions measured using secondary ion mass spectrometry are reported for aluminum implanted in the random and the 〈100〉, 〈110〉, and 〈111〉 directions of the silicon crystal in the ion energy range from 5 to 300 keV, and show agreement between the two measurements for selected energies and with one prior work. Values of range parameters, maximum channeling ranges, and electronic stopping Se are reported.
    Type of Medium: Electronic Resource
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