ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
Using undulator radiation from 2 to 8 keV, quantum efficiencies [QE(E)] of gold photocathodes, microchannel plates (MCP), and silicon surface barrier (SSB) detectors have been investigated. For the gold photocathodes, the detailed structure of QE(E) near the M absorption edges has been presented. Also, the secondary electron conversion efficiency of gold has been calculated using the mass absorption coefficient given by a relativistic Hartree–Slater model and by the semiempirical values of Henke et al., respectively. Extended x-ray absorption fine structure (EXAFS) has been observed in the secondary electron current of the gold photocathode as well as in the detection current responses of an MCP and of an SSB detector. Furthermore, the new findings adding to our recent paper1 have been summarized as follows: (i) EXAFS above the Si-K edge in the MCP response depends on photon incident angles, and (ii) a little upshift of the starting point energy of EXAFS in the MCP response is observed. These detailed characteristics and their interpretation are described in the following: (i) The current responses of the MCP are obtained as a function of the incident x-ray energy for θ=13° (the bias angle of the MCP), and 40° by using a gold-monitor current. Here, θ denotes the incident angle of the photons to the channel. The data for θ=40° show a smaller jump near the Si-K edge as compared with the data for θ=13°.This is explained as follows: The incident photons for θ=13° are irradiated to and absorbed in the MCP ingredient of SiO2, while photons for θ=40° are incident to the electrode region. (The depth of the electrode coating is more than 10 μm from the MCP surface, while the photons are absorbed at less than 8 μm from the surface for θ=40°.) Thus, the data for θ=40° strongly reflect the characteristics of the electrode, but not of SiO2. The data for several values of θ consistently indicate that the height of this jump becomes smaller with increasing θ. (ii) The observed upshift of the starting point energy of EXAFS in the MCP response presents a contrast to EXAFS in the SSB detector response, in which upshift is not observed. This upshift is ascribed to the molecular structure of SiO2 (the chemical shift); that is, some valence electrons are removed from the Si atoms due to the oxidation (i.e., SiO2). Thus, the screening effects of the valence electrons on the core electron-nucleus attraction are reduced. This results in the shift of binding energy towards the higher-energy side. On the other hand, EXAFS in the SSB detector response reflects the characteristics of Si.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1140762
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