Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 2227-2229
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A novel, band-inverted semiconductor junction is proposed. The heterojunction consists of two column V semimetals that have undergone a semimetal-semiconductor transition, i.e., a thin Bi film of thickness ∼100 A(ring) and a Bi1−xSbx alloy with 0.06〈x〈0.3. Such a junction will support the recently predicted interfacial states. Results of calculations on the dispersion relation and optical transitions pertaining to the interfacial states are presented. It is shown that the optical transition rate between an interfacial state and the conduction state is comparable to that of a conduction-valence band transition. It is also shown that the optical transitions have very interesting polarization dependences.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98948
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