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  • 1985-1989  (10)
  • 1
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 87 (1987), S. 821-829 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using monochromatized synchrotron radiation, the gas phase photoelectron spectra of the Hg 5d and valence levels of Hg(CH3)2 have been obtained between 21 and 100 eV photon energies. Experimental valence band branching ratios have been compared with theoretical branching ratios from MS-Xα calculations. Our results strongly suggest that the ordering of valence levels is 2a‘2〈3a1〈2e'〈2e‘, rather than 2a‘2〈3a1〈2e‘〈2e' from previous theoretical calculations. For the 3a'1 orbital, two shape resonances are predicted at 30 and 50 eV kinetic energy. Only the one at 30 eV is observed. Interchannel coupling with Hg 5d photoemission is important for the outermost 2a‘2 and 3a'1 orbitals. Shape resonances and interchannel coupling strongly suggest that He ii:He i cross section ratios cannot generally be used to infer orbital character. The Hg 5d intensity ratio in Hg(CH3)2 differs from that of atomic Hg in the low photon energy region. This effect is probably due to the differences in the outgoing f wave potential between Hg and Hg(CH3)2.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 3840-3850 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using monochromatized synchrotron radiation, gas phase photoelectron spectra of CF3I have been obtained between 21 and 100 eV photon energies. Experimental valence band branching ratios have been compared with theoretical branching ratios from MS-Xα calculations. The generally good agreement between experiment and theory confirms the orbital assignment: 4e〈4a1〈1a2∼3e〈2e〈3a1〈1e∼2a1 〈1a1, in order of increasing binding energy. In contrast to CF4, MS-Xα calculations predict two shape resonances for CF3I at 15.2 eV (e channel) and 17.2 eV (a1 channel). Experimentally, weak shape resonances are observed on e orbitals at ∼14 eV kinetic energy. The cross sections are very useful for correlating orbitals in CF3I with those of CF4. For example, the cross sections suggest that the 3e orbital in CF3I correlates with the 1t1 orbital rather than the 4t2 orbital in CF4. After the onset of the I 4d level at ∼57 eV, intershell coupling becomes important in enhancing valence band levels having high I 5p character such as the 4e orbital. The I 4d branching ratio from 66 to 110 eV is similar to the Xe 4d branching ratio in atomic Xe, indicating atomic-like behavior for the I 4d subshell.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 4906-4916 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using monochromatized synchrotron radiation, the gas phase photoelectron spectra of the five valence orbitals of CF4 and SiF4 have been obtained from 21 to 100 eV photon energies. Branching ratios (BR) for both molecules, and partial cross sections (σ) for CF4, have been obtained from these spectra. The agreement between our σ values for CF4 and previous results is excellent. Theoretical branching ratios, partial cross sections, and β values have been obtained from MS Xα calculations, and compared with experiment. The generally good agreement between experiment and theory for SiF4 confirms the orbital assignment: 1t1〈5t2〈1e〈4t2〈5a1, in order of increasing binding energy. In contrast to the CF4 results which show little structure, five shape resonances are predicted for SiF4, at 3, 7, 13, 23, and 35 eV kinetic energies. The predicted resonance positions and intensities are in good agreement with experiment (e.g., for the 23 and 35 eV resonances), but the low energy resonance positions and intensities are usually not well reproduced experimentally. The radically different resonance features in CF4 and SiF4 are discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 4809-4812 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The energy shifts in 3d photoelectron and M4N4,5 N4,5 Auger spectra of Xe have been studied for HXeF2, XeF4, and XeF6 molecules in the gas phase. Using the Auger parameter method, the contributions of the initial state chemical and final state extra-atomic relaxation effects to the observed shifts have been estimated. The relaxation part has found to be significant both in the binding energy (up to 1.8 eV for XeF6) and especially in the Auger shifts. The ground state shifts are thus larger than the 3d binding energy shifts reported earlier. Calculated atomic charges are also now in better agreeement with theory and other experimental values.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 84 (1986), S. 5-9 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using monochromatized synchrotron radiation and angle integrated photoelectron spectroscopy, the Si 2p, Si LVV Auger, and F 2s cross sections have been obtained for SiF4 molecules in the gas phase between 116 and 150 eV photon energies. These cross sections and the Si 2p β value have also been calculated using the MS-Xα method. There is qualitative agreement between theory and experiment. Together with recent experimental and theoretical Si 2p cross sections from SiCl4 and valence band cross sections on SiF4, the two major resonances at 5 and 22 eV kinetic energies are assigned as t2 resonances. The valence band branching ratios are not affected by interchannel coupling above the Si 2p threshold.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 177-179 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of sputter etching and subsequent surface treatments including thermal annealing and oxygen exposure on n-InP surfaces have been studied by measuring the photoemission spectra using both Al Kα and synchrotron radiation. Results indicate that sputtering with Ar+ at 1–3 keV and low current density leaves an In-rich surface (In/P=2) and, from the movement of the Fermi level relative to the conduction-band minimum, is seen to introduce acceptor-type defects. Annealing of the surface causes dissolution of some excess In into the bulk as well as removal of some of these defects. The behavior of the annealed surface to oxygen exposure is similar to that of the cleaved surface with the creation of donor defects.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 84 (1986), S. 3603-3609 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using monochromatized synchrotron radiation, the gas phase photoelectron spectra of the first five valence orbitals of XeF2 have been obtained from 21–50 eV photon energy. From these spectra, the branching ratios and partial cross sections have been calculated. Theoretical branching ratios and partial cross sections have been obtained from MS-Xα calculations and compared with experiment. The generally good agreement between experiment and theory confirms the DV-Xα and MS-Xα orbital assignments: 5πu 〈10σg 〈3πg 〈4πu 〈6σu, in order of increasing binding energy. Somewhat surprisingly because of the lack of antibonding virtual orbitals above threshold and the long Xe–F bond length (2.00 A(ring)), a number of strong resonances are predicted and observed. For example, resonances are predicted at 4.8 (πg channel), 11.6 (πu, δu channels), and 14.3 eV (σu channel) kinetic energies. The observed resonance positions are usually in reasonable agreement with these. The nature of these resonances are discussed, and compared to similar features in O2, F2, and CO2.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 12 (1988), S. 443-444 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Type of Medium: Electronic Resource
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