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  • 1985-1989  (17)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1885-1887 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sintered α-SiC and hot-pressed Si3N4 were coimplanted with 175 keV Ti+ and 46 keV C+ at doses of 1×1017 cm−2. Energies of Ti+ and C+ were such that the depth distributions match closely. The samples were annealed at 1200 °C for 2 h in flowing Ar. The samples were characterized by Rutherford backscattering and cross-section transmission electron microscopy. The distribution of Ti in α-SiC remained unaltered after the anneal whereas significant redistribution occurred in Si3N4. Cross-section transmission electron microscopy revealed the formation of TiC precipitates in the recrystallized surface layer of SiC. Although some precipitates were found to be present in the recrystallized surface layer of Si3N4, the diffraction analysis revealed that these are not TiC.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2257-2259 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mixing rates of the Ni-Pt and René N4-Pt systems under high-energy ion bombardment were measured using Rutherford backscattering spectroscopy. The mixing was induced by various fluences of 1-MeV Pt+ ions. The extent of mixing in René N4-Pt was the same as in Ni-Pt, suggesting the absence of any effects of high voume fraction of ordered second phase (gamma prime) on the mixing phenomenon in the former system. The amounts of mixing predicted by the model based on thermochemical effects were very close to those measured, while cascade collision theory could account for only 2%–3% of the mixing.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4791-4794 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-energy ion irradiation effects on the surfaces of α-silicon carbide (SiC) and hot-pressed silicon nitride (Si3N4) were studied by optical microscopy, surface profilometry, Auger electron spectroscopy, and transmission electron microscopy (TEM) techniques. Optical microscopy and surface profilometry revealed that 1-MeV Ni+ ion irradiation at a dose of 1×1016 cm−2 produces swelling and roughness on both SiC and Si3N4. Auger electron spectroscopy in combination with sputtering revealed that the SiC surface becomes C rich, whereas the Si3N4 surface becomes Si rich due to ion irradiation. Cross-section TEM analysis of the surface layer of irradiated SiC showed that about 1 μm of material at the surface has become amorphous due to irradiation with 1-MeV Ni+ at a dose of 1×1016 cm−2. Amorphization has also been observed in Si3N4. These results are discussed with reference to the information available in the literature.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2798-2798 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3590-3593 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrodeposition technique previously developed by the present authors for in situ growth of p-type CdTe thin films, has been further improved using As as an acceptor dopant. Photovoltaic-quality films were grown on conducting glass and Mo substrates and characterized by scanning electron microscopy, electron probe microanalyses, and Auger electron spectroscopy. These films were subsequently utilized in the construction of inverted photovoltaic cell structures comprising the n-CdS/p-CdTe heterojunction. Efficiencies approaching the 5% level (AM1 insolation) have been obtained thus far on small-area (∼0.20 cm2) devices.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5263-5266 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion beam mixing of B, ZrO2, and Cr layers with sintered α-SiC, and Y and Cr layers with hot pressed Si3N4 was measured at room temperature. The mixing ion was selected from 1-MeV Ni+, 2-MeV Au+, or 1-MeV O+ ions. The amount of mixing was evaluated from Rutherford backscattering and Auger electron spectroscopies and occasionally from cross-section transmission electron microscopy. It was found that mixing takes place in the B/SiC, Cr/SiC, and Y/Si3N4 systems. No mixing is observed in the ZrO2/SiC and Cr/Si3N4 systems even after high dose ion bombardment. The enthalpy of mixing rule, which states that metals mix with insulators if the reaction enthalpy is negative and do not mix if it is positive, has been examined and found to hold for these systems.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 248-252 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross-sectional transmission electron microscopy and Rutherford backscattering techniques were employed to study the mixing rates of NiMo and NiTi binary systems under high-energy ion bombardment. Mixing was carried out by using 1-MeV Au+ ions at various doses. Results show that the amount of mixing of NiTi is about three times higher than NiMo. Cascade collision theory can only account for a maximum of 20% difference in the amount of mixing of these two systems. However, a model based on thermodynamics has been found to predict correctly the amount of mixing of these two systems.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 32 (1986), S. 215-220 
    ISSN: 1434-6052
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract It is shown, using an effective theory, that the electric charge that develops on a magnetic monopole, due to the presence of the CP-violating term $$[\theta e^2 /(32\pi ^2 )]F_{\mu v}^a \tilde F^{\mu va} $$ , does not vanish for massless fermions.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 322 (1985), S. 665-667 
    ISSN: 1434-601X
    Keywords: 21.10.Pc
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A good description of the single particle shell model states near the Fermi surface, after including core polarization correction, can be obtained by taking identical geometrical shapes for both central and spin orbit potential thus reducing the number of free parameters in the scattering analysis. This bary centric approach also reproduces the charge distribution admirably.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 330 (1988), S. 1-3 
    ISSN: 1434-601X
    Keywords: 21.10.ft
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract On the basis of a unique set of one body potentials and a good interpolation formula we have calculated orbit radii of valence nucleons of different nuclei near the closed shells ranging from calcium to bismuth and have found good agreement with the experimental results, thus demanding its use as a global one.
    Type of Medium: Electronic Resource
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