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  • 1985-1989  (4)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1831-1832 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Flows with coherent structures allow see-free measurements of local velocity and velocity fluctuations. Continuous turbulent velocity histories in ionizing shock waves are obtained at a 10-MHz sampling rate. From this, correlation profiles and frequency spectra are determined which reveal the presence of prominent high-frequency components.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1299-1301 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the design, construction, and test results of a novel microwiggler structure with a periodicity of 2.4 mm for free-electron laser applications. The experimentally demonstrated tunability of field amplitude provides versatile means for field tapering, optical klystron configurations, improving field uniformity, and electron beam matching at the wiggler entrance.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 350-353 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low carrier concentrations of undoped p-type and Te-doped n-type GaSb epilayers have been grown on (100)-oriented Te-doped GaSb substrates by liquid-phase epitaxy with supersaturation and undersaturation techniques, respectively. The net carrier concentrations of undoped and Te-doped layers obtained by C-V measurement can be as low as NA −ND =8×1015 cm−3 and ND −NA =1016 cm−3 , respectively. These GaSb-grown layers were characterized by photoluminescence (PL) measurement. The native neutral acceptor transitions appear at 778.2 meV for undoped layers and 777.2 meV for Te-doped layers. The ionization energy for the Te donor in GaSb was determined to be 3.6 meV below the bottom of conduction band at 18 K. The relation between the energy gap of GaSb and temperature was obtained by PL measurement at various temperatures. The spin-orbit splitting of the valence band was measured to be 0.798 eV at room temperature.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 0030-493X
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Extensive networks of metastable ions link the major peaks in the electron impact mass spectra of two crown ethers containing 2,6-pyrido units. High-resolution mass measurements and the metastable peaks allow the elucidation of the fragmentation pathways. The spectra are influenced more by the presence of aromatic substituents than by the 2,6-pyrido units.
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
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