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  • 1985-1989  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Double tilt heating specimen holder for surface imaging by reflection electron microscopy using an EM 300 Philips microscope (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 418-420 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new type of heating specimen holder which allows reflection electron microscopy (REM) imaging with incident and azimuthal angle control is described. A REM image is presented, from a bulk specimen whose surface was prepared in situ, and shows strong contrasts due to atomic steps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138315
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Cross-sectional high-resolution electron microscopy investigation of argon-ion implantation-induced amorphization of silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4415-4423 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross-sectional high-resolution transmission electron microscopy and related diffraction techniques are applied to the characterization of argon implantation-induced amorphization of silicon at room temperature. Damage calculations have been performed to provide a theoretical support for the cross-sectional transmission electron microscopy observations. It is shown that the amorphous-crystalline interfacial roughness is strongly dependent on ion dose and hence on its depth location. The a-c transition region was found to have sharply defined boundaries and sometimes exhibits defects such as dislocations and stacking-fault nuclei. Combining the experimental measurement of the extension of the a layer for increasing dose, with concepts arising from the "critical damage energy density'' model leads to a value of about 10 eV/atom for the c→a transformation. It is suggested that temperature effects are responsible for the observation that higher damage energy densities are apparently needed to produce a first continuous a layer than to extend this layer to greater depth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341264
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    Paper (German National Licenses)
    Fulltext
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