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  • 1985-1989  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2098-2101 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct writing of micron-sized features in self-developing photoresists is demonstrated using less than 1 mW of cw ultraviolet light at 257 nm. No energy density or intensity thresholds for ablation are observed. Ablation depth depends only on the deposited energy density and is independent of the rate of deposition; that is, the self-developing process is reciprocal. We have determined that an environment containing oxygen is necessary for complete self-developing; in the absence of O2 the process is self-limiting. Patterns created in poly(methyl methacrylate) have been faithfully reproduced into silicon substrates using reactive-ion etching.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2402-2405 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfering Gaussian laser beams are sometimes used to photochemically etch gratings into materials; the gratings which result are nonuniform since the groove depth varies over the grating cross section. The grating growth can be monitored in real time by observing the diffraction of the writing beams into their various orders. In order to relate the maximum groove depth to the observed diffraction efficiency, the grating nonuniformity must be accounted for. We present a short calculation which does this. The results are checked with measurements on actual gratings and good agreement is obtained. The results can help to interpret previously published measurements.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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