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  • 1
    Electronic Resource
    Electronic Resource
    Cosegregation of the polymorphic C4 with the MHC in the frog, Xenopus laevis (1986)
    Springer
    Immunogenetics 23 (1986), S. 181-186 
    Details
    ISSN: 1432-1211
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract Employing isoeletric focusing combined with enzyme-linked immunoelectrotransfer blot analysis, the fourth component of complement (C4) was analyzed in the two highly histocompatible, major histocompatibility complex homozygous groups (J and K) of Xenopus laevis. Each group had a characteristic C4 isoelectric focusing pattern, i. e., an isoelectric point range of 8.0–8.5 for J (C4 j C4 j ) and 7.6–8.1 for K (C4 k C4 k ). In (J x K)F1 frogs, C4 proteins were expressed in a codominant fashion (C4 j C4 k ). In the backcrossed progeny B1 [J × (J × K)F1], those with C4 j C4 j rejected (J × K)F1 skins hyperacutely (〈 17 days), were high responders against (J × K)F1 cells, and nonstimulators to J cells in mixed lymphocyte reaction (MLR), but they did not suffer from the graft-versus-host reaction (GVHR), even after the injection of (J x K)F1 cell-stimulated J splenocytes. On the other hand, the B1 frogs with C4 j C4 k acutely or chronically (〉 17 days) rejected (J × K)F1 skins, were low or nonresponders against (J × K)F1 cells and high stimulators to J cells in MLR, and they suffered from GVHR after the injection of prestimulated J splenocytes. These results argue for the notion that the genes equivalent to mammalian class III map to the MHC at the phylogenetic level of the anuran amphibian.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00373819
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  • 2
    Electronic Resource
    Electronic Resource
    Application of Electrochemical Techniques to the Study of Pitting Corrosion of Copper Tube in Fresh Water (1986)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 8 (Jan. 1986), p. 125-132 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/21/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.8.125.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Room-temperature exciton optical absorption peaks in InGaAsP/InP multiple quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1353-1355 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We grew In1−xGaxAsyP1−y/InP quantum wells (QWs) by low-pressure metalorganic vapor phase epitaxy. The In1−xGaxAsyP1−y layer was closely lattice matched to InP with a composition of y=0.9 (x=0.47y). We investigated structural imperfections such as composition fluctuations, interface roughness, and nonperiodicity analyzing the low-temperature photoluminescence linewidth. We found that the InGaAsP layer composition fluctuated, causing about 5 meV inhomogeneity in the exciton energy level in QWs wider than about 3 nm. Since we obtained very smooth interfaces with less than one monolayer of fluctuation and excellent periodicity by lowering growth temperature to 570 °C, the inhomogeneity of the exciton energy level could be held at 6 meV for 20-period 10-nm multiple QWs. As a result, despite composition fluctuations, a clear room-temperature exciton optical absorption peak was observed at 1.5 μm for the first time to our knowledge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100713
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  • 4
    Electronic Resource
    Electronic Resource
    Preparation and characterization of (111)-oriented Fe3O4 films deposited on sapphire (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3168-3172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of various iron oxides including FeO, Fe3 O4 , and α-Fe2 O3 were formed on the α-Al2 O3 (0001) surface by a reactive vapor deposition method and characterized by x-ray diffraction and conversion electron Mössbauer spectroscopy (CEMS). The formation range for each phase was determined as a function of the substrate temperature (Ts ) and oxygen partial pressure (PO2 ). Typically, the deposition of (111)-oriented epitaxial magnetite films could be performed at low temperatures of Ts =523∼623 K and PO2 =1.0–5.0×10−4 Torr. Good stoichiometry of the as-grown films were confirmed by CEMS, and the Verwey transition was clearly detected by measurements of resistivity and CEMS down to 77 K. However, the large lattice mismatch between the substrate and Fe3 O4 resulted in a columnar particle growth. The initially grown phase on such a mismatched substrate was specifically characterized by depositing the Mössbauer active isotope, 57 Fe, only at the deepest layers. On the other hand, by depositing 57 Fe only in the topmost layers, surface layers of well-crystallized films have been found to be rather stable against oxidation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344154
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  • 5
    Electronic Resource
    Electronic Resource
    Free-carrier lifetime and deep-level luminescence in semi-insulating GaAs: The influence of indium doping and growth in a magnetic field (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1800-1804 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of In doping and/or of growth in a magnetic field on the properties of Czochralski-grown semi-insulating GaAs wafers is investigated. We determine the spatial distribution of the free-carrier lifetime by time-resolved luminescence in the ps regime. The results are compared with the spatial distribution of the near-band-edge and deep-level luminescence. The macroscopical and microscopical homogeneity of the carrier lifetime and the luminescence intensities are improved by the growth in a magnetic field. Indium doping leads to similar improvements and additionally to an increase of the absolute value of the lifetime. The combination of In doping and growth in a magnetic field gives the best results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344351
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetic properties of BiFeO3-BaTiO3 and BiFeO3-PbTi(Zr)O3 glassy sputtered films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5434-5436 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic properties of glassy oxide films which exhibit ferromagnetism and ferroelectricity simultaneously above room temperature prepared by reactive rf sputtering are presented. Nominal film composition is the solid solution compound system expressed by (1−x)BiFeO3-x ABO3, x=0–1 where ABO3 denotes ferro- (antiferro-) electric perovskites, such as BaTiO3, PbTiO3, and PbZrO3. Spontaneous magnetization 4πMs for as-deposited films is small behaving paramagnetically and does not show the compositional dependence. After annealing at temperatures of 600–700 °C in either air or PbO atmosphere, considerably large 4πMs exceeding 1 kG appears at the solid solution composition. All samples with large 4πMs are x-ray amorphous and a rapid decrease in 4πMs takes place after annealing at higher temperatures ((approximately-greater-than)800 °C), where still unidentified crystallites are precipitated. Mössbauer absorption spectra were done to understand the origin of ferromagnetism. Besides pronounced magnetic (and/or dielectric) properties, these films have a high transmittance from visible through near-infrared regions, so that they are expected to be useful as optoelectronic device materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342338
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  • 7
    Electronic Resource
    Electronic Resource
    Fabrication of transparent iron-oxide films by means of sol-gel synthesis (abstract) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5452-5452 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transparent iron-oxide films were fabricated by sol-gel synthesis using a solution of ferric nitrate (III) dissolved in ethylene glycol.1 The solution was kept at 80 °C and stirred constantly in a nitrogen atmosphere. The gel with an appropriate viscosity was spin coated on soft glass plates, then dried and heated in air at various temperatures for 5 h. The films thus prepared are about 0.2 μm thick, amber colored, and especially transparent in the near-infrared region, whose transmittance exceeds 90%. Maximum saturation magnetization 4πMs=0.74 kG [curve (a)] was obtained by annealing at 450 °C, which is still insufficient to use practical application. Reduction heat treatment in a hydrogen atmosphere is found to be very effective to improve magnetic properties: 4πMs is increased to 3 kG [curve (b)], which is about four times as large as the previous one, but the films become semitransparent due to formation of magnetite particles. Original high transmittance recovers by successive annealing in air at 400 °C without any degradation of magnetic properties [curve (c)], where diffraction peaks of maghemite were observed. This strongly suggests that magnetic anisotropy may be arbitrarily controlled by forming linear chains of ferromagnetic particle clusters through reduction heat treatment in a magnetic field. Faraday rotation θF of the samples was also measured. These films are promising as a new type magneto-optic material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342345
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of deep Fe acceptors on the impedance of a semi-insulating n-type Fe-doped InP Schottky barrier (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4626-4632 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The capacitive response of deep Fe acceptors in a semi-insulating n-type Fe-doped InP Schottky barrier has been investigated. The capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics over the frequency range 0.06–100 kHz are measured at 300, 317, and 335 K. Great frequency dispersion is observed in C and G. The reverse bias dependencies of C and (G−G0) are shown to be very weak at high frequencies, where G0 is the dc conductance. As measuring frequency is lowered, (G−G0) decreases but C increases considerably. At low frequencies, the bias dependencies of C and (G−G0) are observed and measured 1/C2 versus reverse bias curves are found to be straight lines. It is shown that at low frequencies, C and (G−G0) take maxima near zero bias and rapidly decrease in a forward bias region. As temperature increases, the frequency region in which such low-frequency characteristics are found extends more widely into a high-frequency range. Theoretical calculations of C and (G−G0) are also carried out. The results are compared with experimental ones. Observed variations of C and G with frequency, bias voltage, and temperature are well explained in terms of the delayed response of deep Fe acceptors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336232
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  • 9
    Electronic Resource
    Electronic Resource
    Study of Au-n-type GaAs Schottky contacts on a single-crystal part of large-grained polycrystalline GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2507-2510 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gold-n-type GaAs Schottky contacts have been fabricated on a single-crystal part of polycrystalline GaAs with grain size of about 1 cm. The current-voltage (I-V) characteristic has been measured over the temperature range 120–380 K. The barrier height is evaluated from the Richardson plot as 0.57 eV, and discussed by taking account of the effects of an interfacial layer between the metal and semiconductor. The capacitance-voltage (C-V) characteristic has been measured at 0.1, 1, and 100 kHz over the temperature range 120–500 K. A frequency dispersion is observed in the C-V characteristic. It is explained by the frequency dispersion in the dielectric constant of the interfacial layer and the capacitive response of trapping states in the interfacial layer and single-crystal parts of polycrystalline GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336997
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  • 10
    Electronic Resource
    Electronic Resource
    Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 16-17 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100822
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