Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 259-261
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The characteristics of Schottky diodes on n-GaAs fabricated after an in situ low-pressure rf H2 plasma treatment have been investigated as a function of the substrate temperature during the plasma treatment. Degraded rectifying characteristics result after room-temperature treatments, while diodes with ideality factor as low as 1.01 were achieved in the temperature range 160–240 °C. An increase in barrier height was also observed with increasing substrate temperature during plasma treatment. The contact properties are correlated to H diffusion in a surface layer of GaAs, which passivates the dopant atoms and defect sites.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101922
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