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  • 1985-1989  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Electrical resistivity of thin epitaxial NiAl buried in (Al,Ga)As (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2112-2114 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the first measurements of electrical resistivity for NiAl layers in (Al,Ga)As/NiAl/(Al,Ga)As semiconductor/metal/semiconductor monocrystalline heterostructures. Layer thicknesses in the range 1.5–100 nm have been studied and all were found to be electrically continuous. Four separate components of resistivity are identified and discussed. The room-temperature resistivity is dominated by electron-phonon and interface-roughness scattering. For films 3 nm in thickness and above, the composition of the NiAl compound can be inferred from the phonon resistivity, while the residual resistivity yields the probability of specular reflection from the interfaces. This parameter is approximately 20% for the films studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101144
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Negative differential resistance in AlAs/NiAl/AlAs heterostructures: Evidence for size quantization in metals (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2528-2530 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first electron transport measurements in (Al,Ga)As/NiAl/(Al,Ga)As semiconductor-metal-semiconductor double heterostructures grown entirely by molecular beam epitaxy. For sufficiently thin NiAl films, a voltage-controlled negative differential resistance region is observed in the axial current-voltage characteristics of our AlAs/NiAl/AlAs double-barrier structures. Room-temperature peak-to-valley ratios as high as 2 have been obtained for a 33 A(ring) NiAl layer. The general characteristics of this phenomenon are remarkably similar to the negative differential resistance observed in all-semiconductor resonant tunneling structures. We believe that this effect can be attributed to electron size quantization in the thin metal film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100198
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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