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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6388-6391 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: One goal of this work was to develop a reproducible method of preparing high quality Y-Ba-Cu-O superconducting films and to study their properties versus thickness. This was accomplished by rf diode sputtering from a single target. Twenty-seven depositions were made using a target containing 8.9-at. % Y, 37.3-at. % Ba, and 53.8-at. % Cu. Film thicknesses ranged from 0.09 to 2.4 μm. The film compositions obtained were 15.6±1.0-at. % Y, 35.8±1.0-at. % Ba, and 48.7±1.7-at. % Cu for the mean and standard deviation. The films were amorphous as-deposited and crystallized by annealing in O2 at 915 °C. X-ray diffraction, transmission electron microscopy, and scanning electron microscopy indicated that, on (100)SrTiO3 substrates, films with thickness less than ∼0.25 μm were epitaxially oriented with their c axis perpendicular to the substrate. Films on (110)SrTiO3 were oriented with their c axis parallel to the substrate. On (100)SrTiO3, zero resistance was achieved in 30 samples from 27 runs at 85.6±1.4 K with a transition width (10%–90%) of 1.8±1.1 K independent of thickness. Results for deposition on a variety of other substrates were more variable. Diamagnetic shielding of up to 38% was calculated from the initial slope of M vs H. This low value was attributed to the presence of second phases and a significant diffusion layer thickness, both observed by transmission electron microscopy. Critical currents, measured by transport using a four-point probe, reached 8.1×105 A/cm2 at 77.35 K for a 0.2-μm film deposited on (100)SrTiO3 . Comparable values were obtained by calculation from the M-H hysteresis loop, from which we infer that there are either continuous epitaxial sheets of c axis oriented 123 or, if there are grain boundaries, the coupling across them is strong.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2773-2777 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: There has been a good deal of interest recently in the applicability of thermal bonding to silicon-on-insultator (SOI) technology. Thermal bonding (also called direct bonding) is accomplished by mating polished, properly hydrolyzed silicon and/or silicon dioxide surfaces, which are then annealed to promote diffusion bonding. In order to produce high-quality SOI layers it must be demonstrated that the interface betweeen the wafers is void-free over the entire surface of the wafer (4-in. wafers in our study). We have found that the standard annealing step which has been used by other groups to form the wafer bond must be followed by a hyperbaric, high-temperature annealing cycle in order to produce interfaces which are completely void-free. In addition, we have found that mating the wafers in a controlled atmosphere is necessary to insure that voids do not remain after the thermal processing is complete. We shall present transmission electron micrographs which reveal the morphology of the bonded interface on an atomic scale. We shall submit C-scan acoustic micrographs and infrared transmission thermographs which display the areal nature of the bonding voids.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2103-2105 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A silicon-on-insulator structure was formed by implanting 2×1018 oxygen ions cm−2 into crystalline silicon at 150 keV. A systematic investigation of the effect of annealing temperature was carried out by annealing for 6 h at temperatures of 1150, 1200, 1250, and 1295 °C. The microstructure and oxygen-concentration profile were investigated by using cross-sectional transmission-electron microscopy and Auger analysis. Changes were observed to occur throughout this annealing-temperature regime. After the highest annealing temperature, a single-crystal top silicon-layer of 150 nm with 4×109 dislocations cm−2 and no oxide precipitates was obtained. The 500 nm of buried oxide has very sharp interfaces, and contains crystalline-silicon inclusions near the interface with the substrate silicon.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3886-3894 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Si and Ge layers have been grown on CaF2/Si(111) by molecular-beam epitaxy. Both Ge and Si grow as islands, and both the island size and the spacing between nucleation sites are considerably larger for Ge (∼300 nm) than for Si (∼100 nm). In addition, Ge and Si layers are found to be a mixture of type-A (aligned with the underlying CaF2) and type-B (rotated 180° about the surface normal with respect to the underlying CaF2) regions. The crystalline quality and surface morphology of the Ge layers are much better than those of the Si layers. This is thought to be due to the larger island size of the Ge deposits and to a greater ease of movement of the boundaries between type-A and type-B regions in Ge. Hall measurements show electron mobilities of up to 664 cm2/V s in Si layers and hole mobilities of 234 cm2/V s for Ge layers. Finally, the use of a GexSi1−x-Si superlattice, when grown on a GexSi1−x buffer layer which is lattice matched to the CaF2 at the growth temperature, is shown to improve Si heteroepitaxy.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4951-4954 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin films of YBa2 Cu3 O7−x with three types of c-axis alignment have been prepared by evaporation: unaligned films on oxidized silicon with zero-resistance transition temperatures as high as 88 K (the highest value reported for thin films of this superconductor on this substrate), films with regions aligned along each of the three 〈100〉 directions of the (100) SrTiO3 substrate, and films with the c-axis perpendicular to the (100) SrTiO3 plane. Typical values of critical current density (A cm −2 ) at 77 K are 102 , 3×104 , and 106, respectively. The temperature dependence of the critical current density is similar for the three types of films; it increases linearly with decreasing temperature, which is suggestive of a flux creep-limited model.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3928-3930 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Four samples of γ-Fe2O3 representing a range of Hc, particle size, and print-through behavior were examined for their structure. All particles were single crystals with symmetric cross sections and predominant [110] longitudinal axis orientation. The sizes obtained from x-ray line broadening measurements were shown to relate to average particle diameters rather than average crystallite sizes within a particle. Neither Hc nor print-through seemed to correlate with porosity as determined from TEM. Print-through (PT) was highest in the sample with the smallest average particle size. This suggests that print-through is strongest in samples with the largest fraction of particles small enough to show magnetization instability. The data for some samples were not completely consistent with this view. The sample with the highest print-through also had the largest concentration of anti-phase boundaries (APB). The manner in which APB's can lower the threshold for magnetization instability, thereby increasing print-through, is discussed.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5913-5913 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: One goal of this work was to develop a reproducible method of preparing high quality Y-Ba-Cu-O superconducting films and to study their properties versus thickness. This was accomplished by rf diode sputtering from a single target. Twenty-seven depositions were made using a target containing 8.9-at. % Y, 37.3-at. % Ba, and 53.8-at. % Cu. Film thicknesses ranged from 0.09 to 2.4 μm. The film compositions obtained were 15.6±1.0-at. % Y, 35.8±1.0-at. % Ba, and 48.7±1.7-at. % Cu for the mean and standard deviation. The films were amorphous as deposited and crystallized by annealing in O2 at 915 °C. X-ray diffraction, transmission electron microscopy, and scanning electron microscopy indicated that, on (100)SrTiO3 substrates, films with thickness less than ∼0.25 μm were epitaxially oriented with their c axis perpendicular to the substrate. Films on (110)SrTiO3 were oriented with their c axis parallel to the substrate. On (100)SrTiO3, zero resistance was achieved in 30 samples from 27 runs at 85.6±1.4 K with a transition width (10%–90%) of 1.8±1.1 K independent of thickness. Results for deposition on a variety of other substrates were more variable. Diamagnetic shielding of up to 38% was calculated from the initial slope of M vs H. This low value was attributed to the presence of second phases and a significant diffusion layer thickness, both observed by transmission electron microscopy. Critical currents, measured by transport using a four-point probe, reached 8.1×105 A/cm2 at 77.35 K for a 0.2-μm film deposited on (100)SrTiO3 . Comparable values were obtained by calculation from the M-H hysteresis loop, from which we infer that there are either continuous epitaxial sheets of c axis oriented 123 or, if there are grain boundaries, the coupling across them is strong.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2719-2721 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin films of the high-temperature superconductor YBa2 Cu3 O7−x have been produced on (100) LaAlO3 substrates by coevaporation and furnace annealing. A 14-μm-wide and 400-μm-long constriction patterned on a 0.8-μm-thick film had a zero resistance transition temperature of 90 K, a transition width of 1.5 K, and a critical current density of 8×104 A cm−2 at 77 K. Although x-ray diffraction shows a definite c-axis alignment normal to the substrate plane, further analysis reveals that c-axis alignment in the substrate plane is also present. The detailed microstructural picture is revealed by transmission electron microscopy: a continuous layer, about 0.2 μm thick adjacent to the substrate, with c axis normal to the substrate plane, and the remaining top portion of the film, with the c axis in the film plane. In spite of the bilayer structure, the film remains epitaxial (the axes of the superconductor are parallel to the 〈100〉 directions of the substrate).
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2068-2070 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thin films of the high-temperature superconductor Y-Ba-Cu-O with zero-resistance transition temperatures up to 83 K have been recently reported by using a zirconia buffer layer on the primary materials of interest for electronics, Si and SiO2. In this letter, various characteristics of these films are discussed. Microstructural analysis using transmission electron microscopy shows the complex morphology of the unoriented polycrystalline films. Elemental depth profiling by x-ray photoelectron spectroscopy shows the effectiveness of the zirconia buffer layer in preventing interdiffusion; fluorine is found throughout the film at an abundance of 4 at. % The critical current density was measured as a function of temperature; its value is 5 kA cm−2 at 4.2 K.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    [s.l.] : Nature Publishing Group
    Nature 339 (1989), S. 185-186 
    ISSN: 1476-4687
    Quelle: Nature Archives 1869 - 2009
    Thema: Biologie , Chemie und Pharmazie , Medizin , Allgemeine Naturwissenschaft , Physik
    Notizen: [Auszug] SIR-Mills et al.' present data to support the view that a dose of 10~5 Gy of 14.4-keV X-rays can ablate a population of malignant cells containing 57Fe(III) o bleomycin. They suggest that such a regime may have the potential for the low-dose sterilization of superficial human tumours. This is ...
    Materialart: Digitale Medien
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