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  • 1985-1989  (15)
  • 1
    Electronic Resource
    Electronic Resource
    Discovery of a new, metallic (but not superconducting) compound in the lanthanum-strontium-copper-oxygen system: La5SrCu6O15 (1987)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 109 (1987), S. 7555-7557 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00258a064
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Impurity-induced-disordered phase modulators in AlGaAs/GaAs quantum well and double-heterostructure waveguides (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 728-730 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results for two new channel waveguide phase modulators formed by impurity-induced disordering (IID) with Zn diffusion in AlGaAs/GaAs are presented. One device utilizes side diffusion into ridges of single quantum well material and the other utilizes surface diffusion into double-heterostructure material. Waveguide loss for both TE and TM polarizations, and effective index steps calculated from observed mode profiles are reported. TE/TM mode conversion was observed without bias under certain conditions. Initial results for phase modulation are in agreement with expectations and appear not to be affected by the IID.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99816
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Surface-oxidation-induced phase separation in FeMn thin films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5667-5669 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of Fe50Mn50, 700 A(ring) thick, were deposited on glass substrates by diode rf sputtering. Auger electron spectroscopy, and x-ray fluorescence analysis verified the film composition and x-ray diffraction determined the crystalline phase to be α-Mn(Fe), a complex bcc-like structure and a considerable deviation from that dictated by the equilibrium binary phase diagram. The films were annealed for 1 h at 260 °C and 10−7, 10−5, and 10−2 Torr. Auger depth profile analysis showed that (a) while no further oxidation (than that induced by ambient exposure) occurred during annealing at the lowest pressure, severe film oxidation took place at the highest pressure and (b) preferential surface oxidation of Mn resulted in a layered structure consisting of a surface Mn- and oxygen-rich layer followed by a region (deeper into the film) depleted in Mn and Fe enriched. The crystalline phases present were determined by x-ray diffraction analysis to be MnO (fcc) and α-Fe(Mn) (bcc). Magnetic measurements of the oxidized films revealed that they displayed in-plane isotropic ferromagnetic properties, with 4πMs∼15–18 kG for the most extensively oxidized films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342268
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Sputtered silicon as a new etching mask for GaAs devices (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1218-1220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of a sputtered silicon film as a new type of etching mask is reported for the first time. Its desirable properties arise because of similar material characteristics (thermal expansion coefficient, crystal structure, smaller misfit factors) and different etching behavior as compared to gallium arsenide. These properties are studied and utilized in the fabrication of GaAs/GaAlAs double heterostructure (DH) ridge waveguide devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337370
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of FeMn(N)/FeMn/Permalloy exchange coupled structures (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6118-6120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction was used to investigate the effect of nitrogen additions on the crystal structure and preferred orientation of FeMn films reactively sputtered in an Ar-N2 ambient. The fcc γ-FeMn phase was stabilized over a range of nitrogen pressures. The fcc FeMn(N) film was then used as a nucleation substrate for the deposition of an FeMn/Permalloy exchange coupled structure. A maximum exchange bias of 60–70 Oe was obtained when the FeMn(N) film was lattice matched to the γ-FeMn structure (a0=3.63 A(ring)).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342111
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  • 6
    Electronic Resource
    Electronic Resource
    Line-broadening analysis of synchrotron x-ray diffraction data (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2813-2816 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The advantages of using monochromatic and parallel synchrotron x rays for the microstructure analysis of polycrystalline materials have been studied. Analysis of line broadening from Pd powers showed encouraging results. Warren–Averbach analysis [J. Appl. Phys. 21, 595 (1950)] with respect to the three major crystal axes [111], [100], and [110] was done using 1-A(ring) x rays. Crystallite sizes and microstrains relative to the [111] direction were obtained using three different reflection pairs (111)-(222), (111)-(333), and (111)-(444). The fixed symmetrical instrument profile shape has major advantages in the correction of instrumental broadening and the determination of a low level (10−4 range) of stacking-fault probabilities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337872
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetic and structural properties of high rate dual ion-beam sputtered NiFe films (invited) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3520-3525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NiFe films in the thickness range of 300 A(ring) to 8 μm with excellent magnetic properties and thickness uniformity have been prepared using a newly developed high rate (up to 1000 A(ring)/min) dual ion beam sputtering system. Deposition conditions such as the ion assist voltage, the target orientation and the partial pressure of nitrogen have been optimized to reduce coercivity Hc and stress as well as to improve film adhesion and film thermal stability. The annealing effects on Hc, the anisotropy field Hk, as well as the resistivity of the NiFe films were studied. X-ray diffraction and transmission electron microscopy techniques were used to characterize the microstructures of the films and were correlated with their magnetic properties. These ion-beam sputtered NiFe films have excellent magnetic, electrical, mechanical, and microstructural properties to make them suitable for thin-film head applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338713
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    X-ray structures and magnetic properties of sputtered osmium-doped iron oxide thin films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3543-3548 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray structures and magnetic properties of sputtered osmium-doped iron oxide thin films prepared under various deposition conditions have been analyzed by x-ray diffraction and vibrating sample magnetometer techniques. Results show that the crystalline phase, macrostain, and grain size play important roles in the coercivity Hc, saturation magnetization 4πMs, and squareness S* of the films. Ferrimagnetic γ-Fe2O3 and/or α-Fe of 400-A(ring) grain size or less were mainly responsible for the good coercivities and magnetizations of the films, i.e., Hc=700–1000 Oe and 4πMs=4000–6000 G. A film which contained appreciable antiferromagnetic α-Fe2O3 phase had much lower Hc(=130 Oe) and 4πMs(=1000 G). Correlation between macrostrain εn, and S* has been observed where the film with large compressive strains had low S*=0.69, and those with little or zero εn gave good squareness S*=0.79–0.81.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336775
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Superconducting Tl-Ca-Ba-Cu-O thin films with zero resistance at temperatures of up to 120 K (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 329-331 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have prepared superconducting Tl-Ca-Ba-Cu-O thin films on a variety of substrates with transition temperatures as high as (approximately-equal-to)120 K, confirmed by sharp onsets of substantial Meissner and shielding signals at the same temperatures. The properties of the films are found to depend sensitively on the post-annealing conditions. Highly textured c-axis-oriented films comprised mostly of Tl2Ca1Ba2Cu2Ox, Tl1Ca2Ba2Cu3Ox, and Tl2Ca2Ba2Cu3Ox were synthesized by varying the annealing procedure with corresponding maximum superconducting transition temperatures of (approximately-equal-to)100, 110, and 120 K, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100599
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  • 10
    Electronic Resource
    Electronic Resource
    Crystallography and microstructure of Tl-Ca-Ba-Cu-O superconducting oxides (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 432-434 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the crystallography and microstructure of six oxides in the Tl-Ca-Ba-Cu-O system with nominal compositions Tl1Ba2Cu1O5, Tl1Ca1Ba2Cu2O7, Tl1Ca2Ba2Cu3O9, Tl2Ba2Cu1O6, Tl2Ca1Ba2Cu2O8, and Tl2Ca2Ba2Cu3O10. The structures consist of one, two, or three Cu perovskite-like units sandwiched between Tl-O monolayers or bilayers. The predominant defects in the crystals with bilayer and trilayer Cu perovskite-like units are stacking faults that produce local intergrowths of related structures. The density of stacking defects in these oxides correlates with changes in the superconducting transition temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100611
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