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  • 1985-1989  (11)
  • 1
    Electronic Resource
    Electronic Resource
    Fluorine redistribution in a chemical vapor deposited tungsten/polycrystalline silicon gate structure during heat treatment (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3229-3232 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fluorine redistribution during heat treatment of chemical vapor deposited tungsten/polycrystalline silicon gate structures was analyzed by the nuclear resonance broadening technique. The tungsten layer was deposited from a hydrogen/tungsten hexafluoride gas mixture. Upon heat treatment in the temperature range 1020–1325-K tungsten disilicide formation was observed using Rutherford backscattering spectrometry. In the as-deposited sample, the fluorine was accumulated at the tungsten/polycrystalline silicon interface. After silicide formation the fluorine was observed at the tungsten disilicide/polycrystalline silicon interface. At temperatures above 1120 K fluorine starts to diffuse through the polycrystalline silicon layer. A variation in the total fluorine content between the samples was also observed. The origin of the fluorine redistribution as well as the variation in the total fluorine content is discussed in connection to conceivable mechanisms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341541
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  • 2
    Electronic Resource
    Electronic Resource
    Redistribution of implanted H in annealings of n-type GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2334-2336 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depth profiles of 60- and 100-keV protons implanted at room temperature to fluences of 1016 and 1017 H+ ions/cm2 in Si-doped n-type GaAs have been obtained using ion beam techniques. The profiles of H have been measured as a function of annealing temperature up to 820 K. The redistribution of implanted H is observed to depend on the migration of implantation-induced defects. The migration of H-atom-defect complexes is approximated by an Arrhenius process with an activation energy of 2.16±0.15 eV and a preexponential factor of 2×105 cm2/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341664
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Depth profiles of defects in CdTe(100) overlayers grown by molecular beam epitaxy on GaAs(100) (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 973-974 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quality of crystal structure of CdTe(100) overlayers grown by molecular beam epitaxy on GaAs(100) substrates has been studied by x-ray diffraction and Rutherford backscattering/channeling methods. The depth distribution of displaced atoms in the overlayers with thicknesses varying from 1.6 to 3.1 μm shows that a defect-free surface is obtained when the film thickness is about 2 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98780
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  • 4
    Electronic Resource
    Electronic Resource
    Nitrogen implantation of metals (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1423-1425 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sixteen metals implanted to saturation with 300-keV N2+ ions have been studied using nuclear resonance broadening and Rutherford backscattering techniques to profile the implanted concentration. Blisters due to the implanted nitrogen were observed in Mg, Al, Ti, V, Cr, Nb, Mo, Ta, W, and AISI 304 steel but not in Cu, Zr, Ag, Hf, and Au. The nominal saturation concentration at maximum varied from 50 to 60 at. % for all cases except for Cu, Ag, and Au, where it was 20 at. %. The surface hardness was generally increased by a factor between 1.2 and 2.3. However, no increase was observed for Mo, Ag, and Au. The mononitride formation in Ti, Zr, and Hf was verified by x-ray diffraction. The formation of blisters and diffusion in the preparation of nitrides is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334504
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  • 5
    Electronic Resource
    Electronic Resource
    Mixing of Al in Si by Ne+ ions (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3246-3248 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-beam mixing has been studied for the case where all components are collisionally similar. In this study a thin Al marker was mixed by implanting 40-keV 22Ne+ into electron-beam-evaporated Si. The mixing was studied with the nuclear resonance broadening technique. It is characterized by a broadening that is proportional to the square root of ion fluence. The data obtained at room temperature, where the negligible solubilities and thermal diffusivities do not contribute to the intermixing of Al and Si, indicate that even in the absence of the long-range transport there is a diffusion mechanism which enhances the mixing with a magnitude some 3–6 times that expected for ballistic mixing. The data is applicable for preparing Al/Si contacts by Al implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335806
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  • 6
    Electronic Resource
    Electronic Resource
    Diffusion of aluminum in ion-implanted α-Ti (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 613-614 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of Al in polycrystalline ion-implanted α-Ti has been studied in the temperature range 600–850 °C using ion-beam techniques. Diffusion couples were created by ion implantation. The time-dependent concentration profiles were monitored by the use of the nuclear resonance broadening technique through the 27Al(p,γ) 28Si reaction. The effect of the implantation energy and implanted dose on the diffusivity of Al has been investigated. The value of 1.62±0.11 eV for the activation energy and (7.4±9.8)×10−7 cm2/s for the frequency factor was obtained. The present result is discussed in the framework of the Ti diffusion barrier used in semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334747
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Ion beam analysis of oxygen distribution in superconducting YBa2Cu3Ox (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1520-1522 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been shown that by combining the elastic scattering of protons and Rutherford scattering of α particles, the total composition and oxygen distribution of superconducting YBa2Cu3Ox films and bulk samples can be analyzed. The non-Rutherford scattering due to the 16O(p,p0)16O reaction enhances at the bombarding energy of 2.3 MeV the elastic scattering cross section by a factor of 5 over the cross section of the Rutherford scattering and makes it possible to determine the oxygen distribution in the matrix of heavy elements Y, Ba, and Cu.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99694
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  • 8
    Electronic Resource
    Electronic Resource
    New approach to growth of high-quality GaAs layers on Si substrates (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1801-1803 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs films were grown by molecular beam epitaxy (MBE) on Si (100) substrates using a two-step growth process of a 300 °C GaAs buffer layer followed by a 600 °C device layer. The films were examined by Rutherford backscattering and x-ray diffraction methods. A significant reduction in the defect density near the GaAs/Si interface and in the bulk of these films was observed when the buffer layer was deposited by alternately supplying Ga atoms and As4 molecules to the substrate, rather than applying conventional MBE. Possible reasons for this reduction of crystal defects are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98527
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  • 9
    Electronic Resource
    Electronic Resource
    Diffusion of Al in ion-implanted α-Zr and α-Hf (1985)
    Springer
    Applied physics 36 (1985), S. 175-178 
    Details
    ISSN: 1432-0630
    Keywords: 66.30.Jt ; 61.70.Tm
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The diffusion of Al in the group IVa metals Zr and Hf has been studied for the first time in the temperature ranges 600°–800°C (Zr) and 750°–900°C (Hf) using ion-beam techniques. Diffusion couples were created by ion-implantation. The time-dependent diffusion profiles were monitored by the use of the Nuclear Resonance Broadening (NRB) technique. The linear Arrhenius plots extracted from the measured diffusivities indicate that the diffusivity of implanted Al in Zr and Hf can be described by the activation energyQ=2.9±0.2eV and 3.7±0.3eV and the pre-exponential factorD 0=17±42cm2/s and 170±600cm2/s, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616548
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  • 10
    Electronic Resource
    Electronic Resource
    Annealing behaviour of C-implanted α-Hf (1986)
    Springer
    Applied physics 40 (1986), S. 253-256 
    Details
    ISSN: 1432-0630
    Keywords: 66.30.Jt ; 61.70.Tm
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The annealing behaviour of C in the group IVa metal Hf has been studied in the previously uninvestigated temperature range 650–800°C using ion-beam techniques. Diffusion couples were created by ion implantation. The time evolution of the carbon profiles were monitored by the use of the Nuclear Resonance Broadening (NRB) technique. The linear Arrhenius plot extracted from the measurements indicates that the diffusivity of implanted C in polycrystalline h.c.p. α-Hf can be described by the activation energyQ=3.9±0.2 eV and the pre-exponential factor D0=(50± 47 120 )×105 cm2/s. The implanted distributions were used to determine the solubility of C in α-Hf for the first time.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616603
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