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  • 1
    Electronic Resource
    Electronic Resource
    Leakage of blood-retinal barrier due to damaging effect of protamine sulfate on the endothelium (1988)
    Springer
    Acta neuropathologica 76 (1988), S. 427-431 
    Details
    ISSN: 1432-0533
    Keywords: Blood-retinal barrier ; Negative surface charge ; Endothelial damage ; Protamine sulfate ; Hemoglobin
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The effect of the polycations, protamine sulfate and poly-l-lysine, on the blood-retinal barrier of rat retinal vessels were studied by retrograde perfusion through the aorta or by intracarotid perfusion of the polycation followed by the protein tracer, hemoglobin. Protamine sulfate induced swelling of cytoplasmic organelles and diffuse staining of many endothelial cells by tracer molecules which subsequently entered the subendothelial and perivascular areas. Polylysine caused some diffuse staining but no leakage of tracer through the endothelial cell. Occasionally, tracer was found in the interendothelial junction after protamine perfusion. The results indicate that surface charge is important for maintaining membrane integrity of the endothelial cells and that breakdown of the blood-retinal barrier may be due to the cytotoxic effect of protamine on the endothelial cell.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00686981
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  • 2
    Electronic Resource
    Electronic Resource
    The Science and Engineering of Large- Diameter Czochralski Silicon Crystal Growth (1987)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 17 (1987), S. 273-298 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.17.080187.001421
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  • 3
    Electronic Resource
    Electronic Resource
    Membrane-Bound NAD(P)H Dehydrogenases in Higher Plant Cells (1986)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Plant Physiology 37 (1986), S. 309-334 
    Details
    ISSN: 0066-4294
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.pp.37.060186.001521
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  • 4
    Electronic Resource
    Electronic Resource
    Temperature dependence of interstitial oxygen diffusion in antimony-doped Czochralski silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2659-2660 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured directly the diffusivity of interstitial oxygen in Sb-doped Czochralski silicon in the temperature range 750–1150 °C. Using secondary-ion mass spectroscopy of outdiffusion profiles, we show that the diffusivity is the same as that for lightly B-doped crystals heated under identical conditions over the temperature range studied. We briefly discuss the implication of these results upon oxygen precipitation mechanisms in Sb-doped silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100186
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  • 5
    Electronic Resource
    Electronic Resource
    Femtosecond dynamics of highly excited carriers in AlxGa1−xAs (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 161-163 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Femtosecond transient absorption saturation measurements are used to investigate the scattering of optically excited carriers in AlGaAs. With pulses as short as 35 fs at 1.98 eV, scattering times ranging from 13 to 330 fs are observed in samples of AlxGa1−xAs with x=0, 0.1, 0.2, 0.3, and 0.4. A dramatic decrease in the rate of carrier scattering out of the initial optically excited states is observed with increasing Al concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98908
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  • 6
    Electronic Resource
    Electronic Resource
    Localized epitaxial growth of WSi2 on silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3481-3488 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of both tetragonal and hexagonal WSi2 in silicon was investigated by transmission electron microscopy. Eight different modes of WSi2 epitaxy were found to grow in (001), (111), and (011) Si. Variants of WSi2 epitaxy were also observed. Crystallographic analyses were performed to find possible matches between atoms in overlayer and silicon at WSi2/Si interfaces. Interfacial structures were analyzed. The roles of the lattice match in the growth of epitaxial WSi2 and MoSi2, which are similar in various aspects, are explored. The effects of anharmonicity in the interatomic force of overlayer on the heteroepitaxial growth and pseudomorphism are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336818
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  • 7
    Electronic Resource
    Electronic Resource
    Localized epitaxial growth of MoSi2 on silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1518-1524 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial tetragonal and hexagonal MoSi2 (t-MoSi2 and h-MoSi2) were grown locally in (001), (111), and (011)Si. Five different epitaxial modes, referring to sets of definite orientation relationships between silicides and the substrate Si, were identified for t-MoSi2, whereas three distinct modes were found for h-MoSi2. Variants of epitaxy, required by the symmetry consideration, were also observed. It is conceived that ample thermal energy was supplied during high-temperature annealings to cause various modes of epitaxy which presumably correspond to low-energy states that occur. The reactive nature of the silicide formation is suggested to facilitate the growth of epitaxial silicides on silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336458
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  • 8
    Electronic Resource
    Electronic Resource
    Localized epitaxial growth of tetragonal and hexagonal WSi2 on (111)Si (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1515-1518 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both epitaxial tetragonal and hexagonal WSi2 (t-WSi2 and h-WSi2) were grown locally on (111)Si. The best epitaxy was obtained in 600–1100 °C two-step annealed samples. The orientation relationships between t-WSi2 and Si are [110]WSi2(parallel)[111]Si and (004)WSi2(parallel)(2¯02), whereas those between h-WSi2 and Si are [0001]WSi2(parallel)[111]Si and (202¯0)WSi2(parallel)(202¯)Si. Interfacial dislocations, 80 A(ring) in spacing, were identified to be of edge type with (1/6)〈112〉 Burgers vectors. Two step annealings were found to be effective in improving the epitaxy and relieving the island formation of WSi2 on Si. Significant intermixing of W and Si atoms during the preannealing is proposed to account for the effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336308
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  • 9
    Electronic Resource
    Electronic Resource
    Femtosecond hot-carrier energy relaxation in GaAs (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1442-1444 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excited carrier dynamics in GaAs and Al0.2Ga0.8As are investigated using femtosecond pump and continuum probe techniques. We observe absorption spectral hole burning arising from excited carriers generated by transitions from the split-off band as well as the heavy- and light-hole bands. Transient absorption saturation measurements indicate that the initial nonthermal carrier distribution thermalizes on a time scale of several tens of femtoseconds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98651
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  • 10
    Electronic Resource
    Electronic Resource
    Push-Pull Perfusion of the Hypothalamus and the Caudate Nucleus in Conscious, Unrestrained Animals (1986)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 473 (1986), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1986.tb23634.x
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