Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
64 (1988), S. 6746-6749
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Gd-silicide phases were investigated by x-ray diffraction. The results showed that not only one phase exists in a Gd thin-film and silicon substrate reactions. The first phase formed was hexagonal GdSi≈1.7, the second orthorhombic GdSi2. The ratio of the two phases depends on temperature of the heat treatment, and at a given temperature and time of annealing, a dependence of the thickness of the evaporated Gd layer was found. At ∼100-nm Gd thickness the dominant phase was orthorhombic GdSi2, at ∼250 nm hexagonal GdSi≈1.7. In the 300–1000-nm interval orthorhombic GdSi2 was the main component again. Rutherford backscattering analysis showed that the phases were found mixed within the layer. This thickness-dependent formation could be described with a simple model proposed by Gösele and Tu [J. Appl. Phys. 53, 3252 (1982)].
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.342006
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