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Digitale Medien

New UHV dilatometer for precise measurement of internal stresses in thin binary-alloy films from 20 to 750 K (1988)

Moske, M. ; Samwer, K.

[S.l.] : American Institute of Physics (AIP)

Review of Scientific Instruments 59 (1988), S. 2012-2017

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ISSN: 1089-7623

Quelle: AIP Digital Archive

Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik

Notizen: We describe a new dilatometric device for internal stress measurements of thin binary-alloy films, able to operate in ultrahigh vacuum in the temperature range 20–750 K. Using a three-terminal capacitor method, the displacement of the free end of a thin cantilever substrate is monitored by the capacitance change. With a sensitivity of 1 nm for substrate displacements, the resolution for stress detection is 105 Pa in a 100-nm-thick film. Simultaneously with the stress measurement, the electrical resistivity of the film can be determined on the same substrate. The direct comparison of electrical and mechanical thin-film properties gives the ability to obtain additional information on the growth process and on the thin-film structure. Measurements of a crystalline Cu film and an amorphous Zr20 Co80 alloy film are shown.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1140017

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Digitale Medien

The origin of internal stresses in amorphous transition metal alloy films (1989)

Moske, M. ; Samwer, K.

Springer

The European physical journal 77 (1989), S. 3-9

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ISSN: 1434-6036

Quelle: Springer Online Journal Archives 1860-2000

Thema: Physik

Notizen: Abstract Amorphous binary-alloy films of ZrCu and ZrCo prepared by electron-beam evaporation show considerable mechanical stresses, which are measured by a capacitive cantilever beam technique. Tensile and compressive stresses are observed, dependent on composition, substrate temperature, and film thickness. The values of the tensile stresses are explained in a freezing model in correlation to a characteristic temperature of the amorphous alloy (glass transition temperature). The thickness dependent compressive stresses can be made plausible by a Stranski-Krastanov growth of the amorphous films which includes a substrate-film interaction due to the specific surface energy and the surface roughness of the films.