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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Archives of microbiology 149 (1988), S. 175-180 
    ISSN: 1432-072X
    Keywords: Halobacterium halobium ; Alpha like DNA polymerase ; Oncogene v-myc
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Partial DNA sequencing of a genomic clone of the archaebacterium Halobacterium halobium, which hydridized with an avian v-myc probe, showed especially the presence, in the organism of one of the conserved regions through myb, myc and adenovirus E1a oncogenes. The archaebacterial deduced amino acid sequence displayed significant homology with the v-myc gene product. In accordance with the partial DNA sequencing which assured a sufficient homology to have similar epitopes, a protein having a molecular weight of 70,000 and possessing high antigenicity with a polyclonal antiserum against avian v-myc protein was isolated and purified from H. halobium extracts. The purified v-myc like protein stimulated in vitro DNA synthesis carried out by the alpha like DNA polymerase of H. halobium.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2057-2061 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs/In1−xAlxAs strained-layer superlattices (SLSs) have been grown by molecular-beam epitaxy on highly mismatched (001) GaAs substrates. High-quality strained thin films were obtained by growing AlSb and In1−yAlyAs buffer layers between substrates and SLSs. X-ray diffraction analysis and photoluminescence (PL) measurements were used to evaluate the internal strain and strain-induced effects on band structures of SLSs. Comparison between observed and calculated results of x-ray analysis shows that free-standing (unsupported) SLSs are grown on a GaAs substrate. The emission peak energies in PL measurements are interpreted by taking into account the internal strain of individual layers in SLSs.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1124-1127 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of In0.2Al0.8As buffer layers on the lattice distortions of the strained layer superlattices (In0.2Al0.8As)100 A(ring) (GaAs)100 A(ring) (30 periods) have been investigated by x-ray diffraction. We have found that for the buffer layer thickness hbuff≥5000 A(ring), the In0.2Al0.8As layers of both buffer layers and superlattices are in a strain-free state, while GaAs layers of superlattices show large tetragonal lattice distortions. This fact implies that for hbuff≥5000 A(ring), buffer layers dominate the strain fields of superlattices, i.e., buffer layers play the role of an "effective substrate.'' Lattice distortions in buffer layers and superlattices against buffer layer thickness are discussed.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 588-592 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the strain-induced effects of the InxAl1−xAs-GaAs strained-layer superlattices grown by molecular beam epitaxy. The evaluation of the effects of biaxial strain in the planes perpendicular to the [001] superlattice direction was made by conventional photoluminescence measurements. The observed optical transition energies were evaluated by a Kronig-Penny model involving strain-induced band structure. Comparison between the observed transition energies and the calculated energies suggests that the optical transition of strained-layer superlattices is explained by the band-gap shift and the valence-band splitting, which are induced by the biaxial strain.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3289-3292 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated finite-size (total number of periods) effects on Raman scattering by longitudinal acoustic (LA) and longitudinal optic (LO) phonon modes in GaAs-AlAs superlattices. Every superlattice has the same period (10-monolayer GaAs and 10-monolayer AlAs), while the total number of periods ranges from 3 to 100 periods. Even in the superlattice with three periods, folded LA phonon modes are induced by the superlattice period. Raman linewidths of folded LA phonon modes increase as the total number of periods decreases. The Raman linewidth broadening becomes remarkable below 20 periods. The dependence of linewidth broadening on the total number of periods results from the relaxation of the Raman selection rule for phonon wave vectors induced by the finiteness of superlattices. On the other hand, for LO phonon modes the finite size does not affect Raman line shapes; this originates in the confinement of LO phonon modes in individual layers.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4342-4345 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy has been used to study the lattice-mismatch strains in GaAs-InxAl1−xAs strained-layer superlattices grown by molecular beam epitaxy with the layer thicknesses of 10–200 A(ring) and In content x of 0.11, 0.20, and 0.35. The strain-induced shifts of the longitudinal optic phonon modes indicate that the GaAs and InxAl1−xAs layers have the tensile and compressive strains, respectively, along the interfaces. The strain calculated from the observed frequency shift agrees with the lattice-mismatch strain given by the elastic theory.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1741-1743 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated infrared absorptions between electron subbands in GaAs-AlxGa1−xAs modulation-doped superlattices with constant layer thicknesses (70 A(ring) for the GaAs layer and 180 A(ring) for the AlxGa1−xAs layer) and a wide Al concentration range from 0.3 to 0.7. Sharp resonance absorptions from the ground state to the first excited state were detected in all samples. The transition energy increases from 130 to 170 meV as the Al concentration increases. From the observed transition energies (subband spacing) we estimate that the conduction-band discontinuity is around 63% of the difference between the direct band-gap energy of GaAs and that of AlxGa1−xAs in the Al concentration range used here.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1420-9071
    Keywords: EMC virus ; Corynebacterium parvum ; diabetes mellitus ; immunity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary Corynebacterium parvum prevented the development of encephalomyocarditis virus-induced diabetes in mice, when it was given 3–14 days before the virus infection. This treatment inhibited virus replication in the pancreas of the infected mice at an early stage of the infection.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Cellular and molecular life sciences 43 (1987), S. 324-327 
    ISSN: 1420-9071
    Keywords: Cyclosporin A ; cellular immunity ; Streptozocin ; insulitis ; diabetes mellitus
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Summary Cyclosporin A (CYA), when administered to CD-1 mice treated with a subdiabetogenic dose of Streptozocin (STZ), exacerbated the STZ-induced insulitis and elevated the plasma glucose levels, parallel to a reduction of the insulin content of the pancreas. The possible mechanisms of CYA-mediated aggravation of STZ-induced diabetes are discussed.
    Type of Medium: Electronic Resource
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