Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
59 (1986), S. 3417-3420
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Annealing behavior of secondary defects in 2-MeV boron ion-implanted (100) silicon has been investigated mainly through cross-sectional TEM observations. The maximum defect density is located at a mean depth of 3.2 μm from the surface and the location is 0.3 μm deeper than that of the projected range of boron ions. This defect position in the crystal is constant under all annealing conditions (e.g., a temperature range of between 700 and 1000 °C, annealing time of up to 6780 min at 1000 °C), although the vertical distribution width of defects changes with both annealing temperature and time.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336808
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